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HFB15PB60

更新时间： 2024-09-15 05:35:59
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网超快速软恢复大功率电源高功率电源快速软恢复高电源超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
7页 153K
描述
Ultrafast Soft Recovery Diode, 15 A

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中文翻译

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HFB15PB60 技术参数

生命周期：Active零件包装代码：TO-247AC
包装说明：MODIFIED TO-247AC, 2 PIN针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.75
其他特性：LOW NOISE, SNUBBER DIODE应用：ULTRA FAST SOFT RECOVERY HIGH POWER
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：TO-247ACJESD-30 代码：R-PSFM-T2
最大非重复峰值正向电流：150 A元件数量：1
相数：1端子数量：2
最高工作温度：150 °C最低工作温度：-55 °C
最大输出电流：15 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
最大功率耗散：74 W认证状态：Not Qualified
最大重复峰值反向电压：600 V最大反向恢复时间：0.06 µs
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLEBase Number Matches：1

HFB15PB60 数据手册

 浏览型号HFB15PB60的Datasheet PDF文件第2页浏览型号HFB15PB60的Datasheet PDF文件第3页浏览型号HFB15PB60的Datasheet PDF文件第4页浏览型号HFB15PB60的Datasheet PDF文件第5页浏览型号HFB15PB60的Datasheet PDF文件第6页浏览型号HFB15PB60的Datasheet PDF文件第7页 
HFA15PB60PbF  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 15 A  
FEATURES  
• Ultrafast recovery  
• Ultrasoft recovery  
• Very low IRRM  
Available  
RoHS*  
COMPLIANT  
• Very low Qrr  
• Specified at operating conditions  
• Lead (Pb)-free  
• Designed and qualified for industrial level  
Base  
common  
cathode  
BENEFITS  
• Reduced RFI and EMI  
2
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
• Reduced parts count  
1
Anode  
1
3
Anode  
2
DESCRIPTION  
HFA15PB60 is a state of the art ultrafast recovery diode.  
Employing the latest in epitaxial construction and advanced  
processing techniques it features a superb combination of  
characteristics which result in performance which is  
unsurpassed by any rectifier previously available. With basic  
ratings of 600 V and 15 A continuous current, the  
HFA15PB60 is especially well suited for use as the  
companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the tb  
portion of recovery. The HEXFRED features combine to offer  
designers a rectifier with lower noise and significantly lower  
switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED HFA15PB60 is ideally suited  
for applications in power supplies and power conversion  
systems (such as inverters), motor drives, and many other  
similar applications where high speed, high efficiency is  
needed.  
TO-247AC modified  
PRODUCT SUMMARY  
VR  
VF at 15 A at 25 °C  
IF(AV)  
600 V  
1.7 V  
15 A  
t
rr (typical)  
19 ns  
TJ (maximum)  
Qrr (typical)  
150 °C  
80 nC  
160 A/µs  
4.0 A  
dI(rec)M/dt (typical) at 125 °C  
I
RRM (typical)  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
600  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
15  
IFSM  
IFRM  
150  
A
Maximum repetitive forward current  
60  
TC = 25 °C  
74  
29  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94052  
Revision: 25-Jul-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
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