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HFB12PA120C

更新时间： 2024-10-01 05:35:59
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
7页 131K
描述
Ultrafast Soft Recovery Diode, 2 x 6 A

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HFB12PA120C 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：TO-247AC
包装说明：R-PSFM-T3针数：3
Reach Compliance Code：compliantHTS代码：8541.10.00.80
风险等级：5.47Is Samacsys：N
应用：ULTRA FAST SOFT RECOVERY配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：TO-247ACJESD-30 代码：R-PSFM-T3
JESD-609代码：e0最大非重复峰值正向电流：80 A
元件数量：2相数：1
端子数量：3最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：6 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
最大功率耗散：62.5 W认证状态：Not Qualified
最大反向恢复时间：0.08 µs表面贴装：NO
端子面层：TIN LEAD端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

HFB12PA120C 数据手册

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HFA12PA120C  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 2 x 6 A  
FEATURES  
• Ultrafast recovery  
• Ultrasoft recovery  
• Very low IRRM  
• Very low Qrr  
Base  
common  
cathode  
2
• Specified at operating conditions  
• Designed and qualified for industrial level  
BENEFITS  
• Reduced RFI and EMI  
1
3
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
TO-247AC  
Anode  
Anode  
2
2
1
Common  
cathode  
• Reduced parts count  
DESCRIPTION  
HFA12PA120C is a state of the art center tap ultrafast  
recovery diode. Employing the latest in epitaxial construction  
and advanced processing techniques it features a superb  
combination of characteristics which result in performance  
which is unsurpassed by any rectifier previously available.  
The HFA12PA120C has basic ratings of 1200 V and 6 A per  
leg continuous current. In addition to ultrafast recovery time,  
the HEXFRED® product line features extremely low values of  
peak recovery current (IRRM) and does not exhibit any  
tendency to “snap-off” during the tb portion of recovery. The  
HEXFRED features combine to offer designers a rectifier  
with lower noise and significantly lower switching losses in  
both the diode and the switching transistor. These  
HEXFRED advantages can help to significantly reduce  
snubbing, component count and heatsink sizes. The  
HEXFRED HFA12PA120C is ideally suited for applications  
in power supplies and power conversion systems (such as  
inverters, converters, UPS systems, and power factor  
correction circuits), motor drives, and many other similar  
applications where high speed, high efficiency is needed.  
PRODUCT SUMMARY  
VR  
VF at 6 A at 25 °C  
IF(AV)  
1200 V  
3.0 V  
2 x 6 A  
26 ns  
t
rr (typical)  
TJ (maximum)  
rr (typical)  
dI(rec)M/dt (typical) at 125 °C  
RRM (typical)  
150 °C  
116 nC  
100 A/µs  
4.4 A  
Q
I
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
VR  
1200  
V
per leg  
per device  
6
Maximum continuous forward current  
IF  
TC = 100 °C  
12  
A
Single pulse forward current  
IFSM  
IFRM  
80  
Maximum repetitive forward current  
24  
62.5  
TC = 25 °C  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
25  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
Document Number: 93914  
Revision: 25-Aug-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
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