HFB15PB60PBF

更新时间： 2024-11-06 05:35:59

品牌	Logo	应用领域
威世 - VISHAY		二极管超快软恢复二极管
页数	文件大小	规格书
7页	153K
描述
Ultrafast Soft Recovery Diode, 15 A

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HFB15PB60PBF 数据手册

HFA15PB60

Vishay High Power Products

HEXFRED^®

Ultrafast Soft Recovery Diode, 15 A

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

Available

• Very low I_RRM

• Very low Q_rr

RoHS*

COMPLIANT

• Specified at operating conditions

• Designed and qualified for industrial level

Base

common

cathode

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

Anode

HFA15PB60 is a state of the art ultrafast recovery diode.

Employing the latest in epitaxial construction and advanced

processing techniques it features a superb combination of

characteristics which result in performance which is

unsurpassed by any rectifier previously available. With basic

ratings of 600 V and 15 A continuous current, the

HFA15PB60 is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to

ultrafast recovery time, the HEXFRED^®product line features

extremely low values of peak recovery current (I_RRM) and

does not exhibit any tendency to “snap-off” during the t_b

portion of recovery. The HEXFRED features combine to offer

designers a rectifier with lower noise and significantly lower

switching losses in both the diode and the switching

transistor. These HEXFRED advantages can help to

significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED HFA15PB60 is ideally suited

for applications in power supplies and power conversion

systems (such as inverters), motor drives, and many other

similar applications where high speed, high efficiency is

needed.

TO-247AC modified

PRODUCT SUMMARY

V_R

V_Fat 15 A at 25 °C

I_F(AV)

600 V

1.7 V

15 A

t_rr(typical)

19 ns

T_J(maximum)

150 °C

80 nC

160 A/µs

4.0 A

_rr(typical)

dI_(rec)M/dt (typical) at 125 °C

_RRM(typical)

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_R

TEST CONDITIONS

VALUES

UNITS

Cathode to anode voltage

600

Maximum continuous forward current

Single pulse forward current

I_F

T_C= 100 °C

I_FSM

I_FRM

150

Maximum repetitive forward current

T_C= 25 °C

Maximum power dissipation

P_D

_C= 100 °C

Operating junction and storage temperature range

T_J, T_Stg

- 55 to + 150

°C

Document Number: 93062

Revision: 30-Jul-08

For technical questions, contact: diodes-tech@vishay.com

www.vishay.com

12 3 4 5 6 7

中文翻译

下载PDF

与HFB15PB60PBF相关器件

型号	品牌	获取价格	描述	数据表
HFB160093-300	ETC	获取价格	FERRITE CORE 170 OHM SOLID
HFB16HY20C	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFB16HY20CC	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFB16HY20CCPBF	INFINEON	获取价格	暂无描述
HFB16HY20CCSCS	INFINEON	获取价格	200V 16A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-257AA package - Standard Packaging
HFB16HY20CCSCV	INFINEON	获取价格	Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-257AA, HERMETIC SEALED P
HFB16HY20CCSCX	INFINEON	获取价格	200V 16A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-257AA package - Screening Level TX
HFB16HY20CSCS	INFINEON	获取价格	Rectifier Diode,
HFB16HY20CSCSA	INFINEON	获取价格	Rectifier Diode,
HFB16HY20CSCX	INFINEON	获取价格	200V 16A Hi-Rel Ultra-Fast Discrete Diode in a TO-257AA package - Screening Level TX

与HFB15PB60PBF相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

33

产品中心

服务支持

精选活动

关于我们

帮助中心

HFB15PB60PBF

HFB15PB60PBF 数据手册

与HFB15PB60PBF相关器件

与HFB15PB60PBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HFB15PB60PBF

HFB15PB60PBF 数据手册

与HFB15PB60PBF相关器件

与HFB15PB60PBF相关文章

您还可以找

您在本页遇到什么问题？