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HFB16PA60CPBF

更新时间： 2024-09-16 05:35:59
品牌 Logo 应用领域
威世 - VISHAY 二极管软恢复二极管
页数 文件大小 规格书
7页 213K
描述
Ultrafast, Soft Recovery Diode, 2 x 8 A

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中文翻译

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HFB16PA60CPBF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：TO-247AC
包装说明：R-PSFM-T3针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.75
其他特性：LOW POWER LOSS, LOW NOISE应用：ULTRA FAST SOFT RECOVERY
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：TO-247ACJESD-30 代码：R-PSFM-T3
元件数量：2相数：1
端子数量：3最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：8 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
最大功率耗散：36 W认证状态：Not Qualified
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

HFB16PA60CPBF 数据手册

 浏览型号HFB16PA60CPBF的Datasheet PDF文件第2页浏览型号HFB16PA60CPBF的Datasheet PDF文件第3页浏览型号HFB16PA60CPBF的Datasheet PDF文件第4页浏览型号HFB16PA60CPBF的Datasheet PDF文件第5页浏览型号HFB16PA60CPBF的Datasheet PDF文件第6页浏览型号HFB16PA60CPBF的Datasheet PDF文件第7页 
HFA16PA60C  
Vishay High Power Products  
HEXFRED®  
Ultrafast, Soft Recovery Diode, 2 x 8 A  
FEATURES  
• Ultrafast recovery  
• Ultrasoft recovery  
• Very low IRRM  
common  
Base  
cathode  
• Very low Qrr  
• Specified at operating conditions  
2
• Designed and qualified for industrial level  
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
1
3
TO-247AC  
Anode  
1
Anode  
2
2
Common  
cathode  
• Reduced parts count  
DESCRIPTION  
HFA16PA60C is a state of the art center tap ultrafast  
recovery diode. Employing the latest in epitaxial construction  
and advanced processing techniques it features a superb  
combination of characteristics which result in performance  
which is unsurpassed by any rectifier previously available.  
With basic ratings of 600 V and 8 A per leg continuous  
current, the HFA16PA60C is especially well suited for use as  
the companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the  
tb portion of recovery. The HEXFRED features combine to  
offer designers a rectifier with lower noise and significantly  
lower switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED HFA16PA60C is ideally  
suited for applications in power supplies and power  
conversion systems (such as inverters), motor drives, and  
many other similar applications where high speed, high  
efficiency is needed.  
PRODUCT SUMMARY  
VR  
VF at 8 A at 25 °C  
IF(AV)  
600 V  
1.7 V  
2 x 8 A  
18 ns  
t
rr (typical)  
TJ (maximum)  
Qrr  
150 °C  
65 nC  
dI(rec)M/dt  
240 A/µs  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
VR  
600  
V
per leg  
per device  
8
Maximum continuous forward current  
IF  
TC = 100 °C  
16  
A
Single pulse forward current  
IFSM  
IFRM  
60  
Maximum repetitive forward current  
24  
TC = 25 °C  
36  
14  
Maximum power dissipation  
PD  
W
TC = 100 °C  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
Document Number: 93070  
Revision: 29-Jul-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
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