HFB32PA120C

更新时间： 2024-09-15 22:33:23

品牌	Logo	应用领域
英飞凌 - INFINEON		整流二极管瞄准线局域网超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
6页	117K
描述
Ultrafast, Soft Recovery Diode

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HFB32PA120C 数据手册

Bulletin PD -2.360 rev. B 05/01

HFA32PA120C

HEXFRED

Ultrafast,SoftRecoveryDiode

perLeg

V_R= 1200V

V_F(typ.) = 2.3V

I_F(AV)= 16A

Q_rr(typ.)=260nC

Features

• Ultrafast Recovery

• Ultrasoft Recovery

• Very Low I_RRM

• Very Low Q_rr

• Specified at Operating Conditions

Benefits

I_RRM(typ.) = 5.8A

t_rr(typ.) = 30ns

• Reduced RFI and EMI

• Reduced Power Loss in Diode and Switching

Transistor

• Higher Frequency Operation

• Reduced Snubbing

• Reduced Parts Count

Description

International Rectifier's HFA32PA120C is a state of the art ultra fast recovery

diode. Employing the latest in epitaxial construction and advanced processing

techniques it features a superb combination of characteristics which result in

performance which is unsurpassed by any rectifier previously available. With

basic ratings of 1200 volts and 16 amps continuous current, the HFA32PA120C

is especially well suited for use as the companion diode for IGBTs and

MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line

features extremely low values of peak recovery current (I_RRM) and does not

TO-247AC

exhibit any tendency to "snap-off" during the t_bportion of recovery. The

HEXFRED features combine to offer designers a rectifier with lower noise and

significantly lower switching losses in both the diode and the switching

transistor. These HEXFRED advantages can help to significantly reduce

snubbing, component count and heatsink sizes. The HEXFRED HFA32PA120C

is ideally suited for applications in power supplies and power conversion

systems (such as inverters), motor drives, and many other similar applications

where high speed, high efficiency is needed.

Absolute Maximum Ratings (per Leg)

Parameter

Max

1200

190

151

Units

V_R

Cathode-to-Anode Voltage

Continuous Forward Current

Single Pulse Forward Current

Maximum Repetitive Forward Current

Maximum Power Dissipation

Operating Junction and

I_F@ T_C= 100°C

I_FSM

I_FRM

P_D@ T_C= 25°C

P_D@ T_C= 100°C

T_J

°C

-55 to +150

T_STG

Storage Temperature Range

* 125°C

www.irf.com

12 3 4 5 6

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与HFB32PA120C相关器件

型号	品牌	获取价格	描述	数据表
HFB32PA120CPBF	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 2 x 16 A
HFB35HA20	INFINEON	获取价格	200V 35A UltraFast Recovery Diode packaged in TO-254AA Tabless package
HFB35HA20SCS	INFINEON	获取价格	200V 35A UltraFast Recovery Diode packaged in TO-254AA Tabless package - Screening Level S
HFB35HB20	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFB35HB20C	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFB35HB20SCS	INFINEON	获取价格	200V 35A Hi-Rel Ultra-Fast Discrete Diode in a TO-254AA package - Standard Packaging
HFB50HC20	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFB50HC20C	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFB50HC20CSCS	INFINEON	获取价格	200V 50A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-258AA package - Standard Packaging
HFB50HC20CSCV	INFINEON	获取价格	200V 50A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-258AA package - Screening Level TX

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