Datasheet > HFB1N60F_16

HFB1N60F_16

更新时间： 2024-09-18 01:22:35

品牌	Logo	应用领域
SEMIHOW		/
页数	文件大小	规格书
7页	191K
描述
600V N-Channel MOSFET

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数据手册

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HFB1N60F_16 数据手册

Oct 2016

HFB1N60F

600V N-Channel MOSFET

Features

Key Parameters

Parameter

BV_DSS

Value

600

Unit

Originative New Design

Very Low Intrinsic Capacitances

Excellent Switching Characteristics

100% Avalanche Tested

RoHS Compliant

I_D

R_{DS(on), Typ}

Qg_{, Typ}

6.5

3.7

TO-92

Symbol

Absolute Maximum Ratings ^T_C^{=25୅ unless otherwise specified}

Symbol

Parameter

Value

Unit

600

1.0 *

0.6 *

4.0 *

ρ30

V_DSS

Drain-Source Voltage

Drain Current

– Continuous (T_C= 25୅)

– Continuous (T_C= 100୅)

– Pulsed

I_D

Drain Current

(Note 1)

I_DM

Drain Current

V_GS

E_AS

I_AR

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

1.0

0.3

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_A= 25୅)

V/ns

4.5

0.9

2.5

P_D

Power Dissipation (T_L= 25୅)

- Derate above 25୅

0.02

-55 to +150

W/୅

୅

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

୅

* Drain current limited by maximum junction temperature

Thermal Resistance Characteristics

Symbol

Parameter

Unit

୅/W

Value

R_șJL

Thermal Resistance, Junction-to-Lead, Max.

140

Thermal Resistance, Junction-to-Ambient, Max.

R_șJA

క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΀ΔΥΠΓΖΣ͑ͣͧ͑͢͡

12 3 4 5 6 7

中文翻译

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