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HFB06TB120S

更新时间： 2024-10-01 21:20:51
品牌 Logo 应用领域
威世 - VISHAY 超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
8页 211K
描述
Rectifier Diode, 1 Phase, 1 Element, 8A, Silicon, D2PAK-3

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HFB06TB120S 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：TO-263
包装说明：R-PSSO-G2针数：3
Reach Compliance Code：compliantHTS代码：8541.10.00.80
风险等级：5.41应用：ULTRA FAST SOFT RECOVERY
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：R-PSSO-G2JESD-609代码：e0
湿度敏感等级：1最大非重复峰值正向电流：80 A
元件数量：1相数：1
端子数量：2最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：8 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大反向恢复时间：0.08 µs
表面贴装：YES端子面层：TIN LEAD
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

HFB06TB120S 数据手册

 浏览型号HFB06TB120S的Datasheet PDF文件第2页浏览型号HFB06TB120S的Datasheet PDF文件第3页浏览型号HFB06TB120S的Datasheet PDF文件第4页浏览型号HFB06TB120S的Datasheet PDF文件第5页浏览型号HFB06TB120S的Datasheet PDF文件第6页浏览型号HFB06TB120S的Datasheet PDF文件第7页 
PD-96036  
HFA06TB120SPbF.. Series  
HEXFREDTM  
Ultrafast, Soft Recovery Diode  
(K)  
VR = 1200V  
Features  
BASE  
VF(typ.)* = 2.4V  
+
IF(AV) = 6.0A  
2
• UltrafastRecovery  
• Ultrasoft Recovery  
• Very Low IRRM  
• Very Low Qrr  
• SpecifiedatOperatingConditions  
• Lead-Free  
Qrr (typ.)= 116nC  
I
RRM(typ.) = 4.4A  
trr(typ.) = 26ns  
3
1
(N/C)  
(A)  
-
_
-  
di(rec)M/dt (typ.)* = 100A/µs  
Benefits  
• Reduced RFI and EMI  
• Reduced Power Loss in Diode and Switching  
Transistor  
• HigherFrequencyOperation  
• Reduced Snubbing  
• Reduced Parts Count  
D2 Pak  
Description  
International Rectifier's HFA06TB120S is a state of the art ultra fast recovery diode.  
Employing the latest in epitaxial construction and advanced processing techniques it  
features a superb combination of characteristics which result in performance which is  
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 6  
amps continuous current, the HFA06TB120S is especially well suited for use as the  
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the  
HEXFRED product line features extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to "snap-off" during the tb portion of recovery. The  
HEXFREDfeaturescombinetoofferdesignersarectifierwithlowernoiseandsignificantly  
lower switching losses in both the diode and the switching transistor. These HEXFRED  
advantages can help to significantly reduce snubbing, component count and heatsink  
sizes. The HEXFRED HFA06TB120S is ideally suited for applications in power supplies  
and power conversion systems (such as inverters), motor drives, and many other similar  
applications where high speed, high efficiency is needed.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VR  
F @ TC = 100°C  
IFSM  
IFRM  
Cathode-to-Anode Voltage  
Continuous Forward Current  
Single Pulse Forward Current  
Maximum Repetitive Forward Current  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction and  
1200  
8.0  
80  
V
I
A
24  
P
P
D @ TC = 25°C  
D @ TC = 100°C  
62.5  
25  
W
TJ  
-55 to +150  
°C  
TSTG  
Storage Temperature Range  
* 125°C  
10/07/05  
Document Number: 94039  
www.vishay.com  
1
12345678

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