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HFB06TB120STR

更新时间： 2024-11-11 05:35:59
品牌 Logo 应用领域
威世 - VISHAY 整流二极管瞄准线超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
7页 114K
描述
Ultrafast Soft Recovery Diode, 6 A

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HFB06TB120STR 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：TO-263
包装说明：R-PSSO-G2针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.77
其他特性：LOW POWER LOSS应用：ULTRA FAST SOFT RECOVERY
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：2.8 VJESD-30 代码：R-PSSO-G2
湿度敏感等级：1最大非重复峰值正向电流：80 A
元件数量：1相数：1
端子数量：2最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：8 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：225
认证状态：Not Qualified最大重复峰值反向电压：1200 V
最大反向恢复时间：0.08 µs子类别：Rectifier Diodes
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

HFB06TB120STR 数据手册

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HFA06TB120S  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 6 A  
FEATURES  
• Ultrafast recovery  
• Ultrasoft recovery  
• Very low IRRM  
• Very low Qrr  
• Specified at operating conditions  
• Designed and qualified for industrial level  
Base  
cathode  
+
2
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
3
1
N/C  
Anode  
_
• Reduced parts count  
D2PAK  
DESCRIPTION  
HFA06TB120S is a state of the art ultrafast recovery diode.  
Employing the latest in epitaxial construction and advanced  
processing techniques it features a superb combination of  
characteristics which result in performance which is  
unsurpassed by any rectifier previously available. With basic  
ratings of 1200 V and 6 A continuous current, the  
HFA06TB120S is especially well suited for use as the  
companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the  
tb portion of recovery. The HEXFRED features combine to  
offer designers a rectifier with lower noise and significantly  
lower switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED HFA06TB120S is ideally  
suited for applications in power supplies and power  
conversion systems (such as inverters), motor drives, and  
many other similar applications where high speed, high  
efficiency is needed.  
PRODUCT SUMMARY  
VR  
VF at 6 A at 25 °C  
IF(AV)  
1200 V  
3.0 V  
6 A  
t
rr (typical)  
26 ns  
TJ (maximum)  
Qrr (typical)  
150 °C  
116 nC  
100 A/µs  
4.4 A  
dI(rec)M/dt (typical) at 125 °C  
I
RRM (typical)  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
1200  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
6
IFSM  
IFRM  
80  
A
Maximum repetitive forward current  
24  
62.5  
TC = 25 °C  
Maximum power dissipation  
PD  
W
TC = 100 °C  
25  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
Document Number: 93036  
Revision: 22-Oct-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
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