Datasheet > HFAA04SD60STRPBF

HFAA04SD60STRPBF

更新时间： 2024-10-02 08:36:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	107K
描述
Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DPAK-3

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HFAA04SD60STRPBF 数据手册

HFA04SD60SPbF

Vishay High Power Products

HEXFRED^®

Ultrafast Soft Recovery Diode, 4 A

FEATURES

• Ultrafast recovery time

• Ultrasoft recovery

• Very low I_RRM

• Very low Q_rr

• Guaranteed avalanche

• Specified at operating temperature

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

N/C

D-PAK

Anode

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

PRODUCT SUMMARY

• Reduced parts count

V_R

V_Fat 4 A at 25 °C

I_F(AV)

600 V

1.8 V

4 A

DESCRIPTION/APPLICATIONS

These diodes are optimized to reduce losses and EMI/RFI

in high frequency power conditioning systems. The softness

of the recovery eliminates the need for a snubber in

most applications. These devices are ideally suited for

freewheeling, flyback, power converters, motor drives, and

other applications where high speed and reduced switching

losses are design requirements.

_rr(typical)

17 ns

150 °C

T_J(maximum)

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

I_F(AV)

I_FSM

TEST CONDITIONS

VALUES

UNITS

Cathode to anode voltage

600

Maximum continuous forward current

Single pulse forward current

T_C= 100 °C

Repetitive peak forward current

Maximum power dissipation

I_FRM

T_C= 116 °C

T_C= 100 °C

P_D

Operating junction and storage temperatures

T_J, T_Stg

- 55 to 150

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 µA

600

I_F= 4 A

I_F= 8 A

1.5

1.8

1.4

0.17

1.8

2.2

1.7

3.0

300

Forward voltage

See fig. 1

V_F

I_F= 4 A, T_J= 125 °C

V_R= V_Rrated

Maximum reverse

leakage current

I_R

µA

T_J= 125 °C, V_R= 0.8 x V_Rrated

V_R= 200 V

Junction capacitance

Series inductance

C_T

L_S

Measured lead to lead 5 mm from package body

8.0

Document Number: 94034

Revision: 10-Sep-09

For technical questions, contact: diodestech@vishay.com

www.vishay.com

12 3 4 5 6 7

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与HFAA04SD60STRPBF相关器件

型号	品牌	获取价格	描述	数据表
HFAA04SD60STRR	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, PLASTIC, DPAK-3
HFAA04SD60STRRPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DP
HFAA04SD60TR	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 4 A
HFAA04SD60TRL	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 4 A
HFAA04SD60TRLPBF	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 4 A
HFAA04SD60TRPBF	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 4 A
HFAA04SD60TRR	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 4 A
HFAA04SD60TRRPBF	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 4 A
HFAA08SD60STR	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, PLASTIC, DPAK-3
HFAA08SD60STRL	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, PLASTIC, DPAK-3

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