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HFB04TB60SPBF

更新时间： 2024-10-01 05:35:59
品牌 Logo 应用领域
威世 - VISHAY 二极管超快软恢复二极管
页数 文件大小 规格书
7页 118K
描述
Ultrafast Soft Recovery Diode, 4 A

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HFB04TB60SPBF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SFM
包装说明：R-PSSO-G2针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.75
其他特性：LOW NOISE, SNUBBER DIODE应用：EFFICIENCY
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值正向电流：25 A
元件数量：1相数：1
端子数量：2最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：4 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
最大功率耗散：25 W认证状态：Not Qualified
最大反向恢复时间：0.042 µs表面贴装：YES
端子面层：MATTE TIN OVER NICKEL端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：10
Base Number Matches：1

HFB04TB60SPBF 数据手册

 浏览型号HFB04TB60SPBF的Datasheet PDF文件第2页浏览型号HFB04TB60SPBF的Datasheet PDF文件第3页浏览型号HFB04TB60SPBF的Datasheet PDF文件第4页浏览型号HFB04TB60SPBF的Datasheet PDF文件第5页浏览型号HFB04TB60SPBF的Datasheet PDF文件第6页浏览型号HFB04TB60SPBF的Datasheet PDF文件第7页 
HFA04TB60S  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 4 A  
FEATURES  
• Ultrafast recovery  
• Ultrasoft recovery  
• Very low IRRM  
• Very low Qrr  
• Specified at operating conditions  
• Designed and qualified for industrial level  
Base  
common  
cathode  
BENEFITS  
• Reduced RFI and EMI  
+
2
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
1
3
• Reduced parts count  
-
-
Anode  
Anode  
D2PAK  
DESCRIPTION  
HFA04TB60S is a state of the art ultrafast recovery diode.  
Employing the latest in epitaxial construction and advanced  
processing techniques it features a superb combination of  
characteristics which result in performance which is  
unsurpassed by any rectifier previously available. With basic  
ratings of 600 V and 4 A continuous current, the  
HFA04TB60S is especially well suited for use as the  
companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the  
tb portion of recovery. The HEXFRED features combine to  
offer designers a rectifier with lower noise and significantly  
lower switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED HFA04TB60S is ideally  
suited for applications in power supplies and power  
conversion systems (such as inverters), motor drives, and  
many other similar applications where high speed, high  
efficiency is needed.  
PRODUCT SUMMARY  
VR  
600 V  
1.8 V  
VF at 4 A at 25 °C  
IF(AV)  
4 A  
trr (typical)  
17 ns  
TJ (maximum)  
150 °C  
40 nC  
280 A/µs  
Q
rr at 125 °C  
dI(rec)M/dt at 125 °C  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
600  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
4
IFSM  
IFRM  
25  
A
Maximum repetitive forward current  
16  
TC = 25 °C  
25  
10  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
Document Number: 93033  
Revision: 22-Oct-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
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