HFB06PB120

更新时间： 2024-09-30 22:33:23

品牌	Logo	应用领域
英飞凌 - INFINEON		整流二极管局域网超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
7页	182K
描述
HEXFRED Ultrafast, Soft Recovery Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HFB06PB120 数据手册

Bulletin PD -2.363 rev. D 12/00

HFA06PB120

HEXFRED

Ultrafast, Soft Recovery Diode

Features

• UltrafastRecovery

• UltrasoftRecovery

• Very Low I_RRM

BASE

V_R= 1200V

CATHODE

V_F(typ.)* = 2.4V

_F(AV)= 6.0A

• Very Low Q_rr

• SpecifiedatOperatingConditions

Q_rr(typ.)=116nC

I_RRM(typ.) = 4.4A

t_rr(typ.) = 26ns

Benefits

• ReducedRFIandEMI

• Reduced Power Loss in Diode and Switching

Transistor

CATHODE

ANODE

di_(rec)M/dt (typ.)* = 100A/µs

• HigherFrequencyOperation

• ReducedSnubbing

• ReducedPartsCount

Description

TO-247AC(Modified)

International Rectifier's HFA06PB120 is a state of the art ultra fast recovery diode.

Employing the latest in epitaxial construction and advanced processing techniques it

features a superb combination of characteristics which result in performance which is

unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and

6 amps continuous current, the HFA06PB120 is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the

HEXFRED product line features extremely low values of peak recovery current (I_RRM

)

and does not exhibit any tendency to "snap-off" during the t_bportion of recovery. The

HEXFRED features combine to offer designers a rectifier with lower noise and

significantly lower switching losses in both the diode and the switching transistor.

These HEXFRED advantages can help to significantly reduce snubbing, component

countandheatsinksizes. TheHEXFREDHFA06PB120isideallysuitedforapplications

in power supplies and power conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high efficiency is needed.

Absolute Maximum Ratings

Parameter

Max.

Units

V_R

Cathode-to-Anode Voltage

Continuous Forward Current

Single Pulse Forward Current

Maximum Repetitive Forward Current

Maximum Power Dissipation

1200

8.0

I_F@ T_C= 100°C

I_FSM

I_FRM

62.5

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

T_STG

Operating Junction and

Storage Temperature Range

-55 to +150

°C

* 125°C

12 3 4 5 6 7

中文翻译

下载PDF

与HFB06PB120相关器件

型号	品牌	获取价格	描述	数据表
HFB06PB120PBF	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 6 A
HFB06TB120	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 6 A
HFB06TB120	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFB06TB120PBF	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 6 A
HFB06TB120S	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, Silicon, D2PAK-3
HFB06TB120S	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, Silicon, D2PAK-3
HFB06TB120SPBF	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, Silicon, D2PAK-3
HFB06TB120STR	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 6 A
HFB06TB120STR	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFB06TB120STRL	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 1200V V(RRM), Silicon, D2PAK-3

与HFB06PB120相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

31
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

27
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

26
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

37

产品中心

服务支持

精选活动

关于我们

帮助中心

HFB06PB120

HFB06PB120 数据手册

与HFB06PB120相关器件

与HFB06PB120相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HFB06PB120

HFB06PB120 数据手册

与HFB06PB120相关器件

与HFB06PB120相关文章

您还可以找

您在本页遇到什么问题？