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HFB04TB60S PDF预览

HFB04TB60S

更新时间: 2024-10-01 05:35:59
品牌 Logo 应用领域
威世 - VISHAY 二极管超快软恢复二极管
页数 文件大小 规格书
7页 118K
描述
Ultrafast Soft Recovery Diode, 4 A

HFB04TB60S 数据手册

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HFA04TB60SPbF  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 4 A  
FEATURES  
• Ultrafast recovery  
• Ultrasoft recovery  
• Very low IRRM  
Available  
RoHS*  
COMPLIANT  
• Very low Qrr  
• Specified at operating temperature  
• Lead (Pb)-free  
• Designed and qualified for Q101 level  
Base  
common  
cathode  
+
2
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
1
3
-
-
Anode  
Anode  
• Reduced parts count  
D2PAK  
DESCRIPTION  
HFA04TB60S is a state of the art ultrafast recovery diode.  
Employing the latest in epitaxial construction and advanced  
processing techniques it features a superb combination of  
characteristics which result in performance which is  
unsurpassed by any rectifier previously available. With basic  
ratings of 600 V and 4 A continuous current, the  
HFA04TB60S is especially well suited for use as the  
companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the  
tb portion of recovery. The HEXFRED features combine to  
offer designers a rectifier with lower noise and significantly  
lower switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED HFA04TB60S is ideally  
suited for applications in power supplies and power  
conversion systems (such as inverters), motor drives, and  
many other similar applications where high speed, high  
efficiency is needed.  
PRODUCT SUMMARY  
VR  
600 V  
1.8 V  
VF at 4 A at 25 °C  
IF(AV)  
4 A  
trr (typical)  
17 ns  
TJ (maximum)  
150 °C  
40 nC  
280 A/µs  
Q
rr at 125 °C  
dI(rec)M/dt at 125 °C  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
600  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
4
IFSM  
IFRM  
25  
A
Maximum repetitive forward current  
16  
TC = 25 °C  
25  
10  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94036  
Revision: 22-Oct-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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