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HFA30TA60CS PDF预览

HFA30TA60CS

更新时间: 2024-01-06 13:25:18
品牌 Logo 应用领域
威世 - VISHAY 整流二极管瞄准线超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
6页 180K
描述
Ultrafast Soft Recovery Diode, 2 x 15 A

HFA30TA60CS 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:R-PSSO-G2Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.12
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.7 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3元件数量:1
相数:1端子数量:2
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大反向电流:10 µA最大反向恢复时间:0.06 µs
表面贴装:YES端子面层:MATTE TIN OVER NICKEL
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40Base Number Matches:1

HFA30TA60CS 数据手册

 浏览型号HFA30TA60CS的Datasheet PDF文件第2页浏览型号HFA30TA60CS的Datasheet PDF文件第3页浏览型号HFA30TA60CS的Datasheet PDF文件第4页浏览型号HFA30TA60CS的Datasheet PDF文件第5页浏览型号HFA30TA60CS的Datasheet PDF文件第6页 
HFA30TA60CS  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 2 x 15 A  
FEATURES  
• Ultrafast recovery  
• Ultrasoft recovery  
• Very low IRRM  
• Very low Qrr  
• Specified at operating conditions  
• Designed and qualified for industrial level  
Base  
common  
cathode  
BENEFITS  
• Reduced RFI and EMI  
2
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
• Reduced parts count  
2
1
3
Common  
cathode  
Anode  
Anode  
DESCRIPTION  
HFA30TA60CS is a state of the art center tap ultrafast  
recovery diode. Employing the latest in epitaxial construction  
and advanced processing techniques it features a superb  
combination of characteristics which result in performance  
which is unsurpassed by any rectifier previously available.  
With basic ratings of 600 V and 15 A per leg continuous  
current, the HFA30TA60CS is especially well suited for use  
as the companion diode for IGBTs and MOSFETs. In  
addition to ultrafast recovery time, the HEXFRED® product  
line features extremely low values of peak recovery current  
(IRRM) and does not exhibit any tendency to “snap-off” during  
the tb portion of recovery. The HEXFRED features combine  
to offer designers a rectifier with lower noise and significantly  
lower switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED HFA30TA60CS is ideally  
suited for applications in power supplies and power  
conversion systems (such as inverters), motor drives, and  
many other similar applications where high speed, high  
efficiency is needed.  
D2PAK  
PRODUCT SUMMARY  
VR  
VF at 15 A at 25 °C  
IF(AV)  
600 V  
1.7 V  
2 x 15 A  
19 ns  
t
rr (typical)  
TJ (maximum)  
Qrr (typical)  
150 °C  
80 nC  
dI(rec)M/dt (typical) at 125 °C  
160 A/µs  
4.0 A  
I
RRM (typical)  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
VR  
600  
V
per leg  
per device  
15  
Maximum continuous forward current  
IF  
TC = 100 °C  
30  
A
Single pulse forward current  
IFSM  
IFRM  
150  
Maximum repetitive forward current  
60  
TC = 25 °C  
74  
29  
Maximum power dissipation  
PD  
°C  
W
TC = 100 °C  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
Document Number: 93092  
Revision: 22-Oct-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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