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HFA30TA60CSTRLPBF PDF预览

HFA30TA60CSTRLPBF

更新时间: 2024-11-29 10:47:47
品牌 Logo 应用领域
威世 - VISHAY 整流二极管超快软恢复二极管
页数 文件大小 规格书
8页 208K
描述
HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A

HFA30TA60CSTRLPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PSSO-G2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.59Is Samacsys:N
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.6 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.06 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:TIN
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

HFA30TA60CSTRLPBF 数据手册

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VS-HFA30TA60CSPbF  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 2 x 15 A  
FEATURES  
• Ultrafast recovery  
• Ultrasoft recovery  
• Very low IRRM  
• Very low Qrr  
Base  
common  
cathode  
2
• Specified at operating conditions  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Halogen-free according to IEC 61249-2-21  
definition  
• Compliant to RoHS directive 2002/95/EC  
• AEC-Q101 qualified  
2
1
3
D2PAK  
Common  
cathode  
Anode  
Anode  
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
• Reduced parts count  
DESCRIPTION  
PRODUCT SUMMARY  
VS-HFA30TA60CS is a state of the art center tap ultrafast  
recovery diode. Employing the latest in epitaxial  
construction and advanced processing techniques it  
features a superb combination of characteristics which  
result in performance which is unsurpassed by any rectifier  
previously available. With basic ratings of 600 V and 15 A  
per leg continuous current, the VS-HFA30TA60CS is  
especially well suited for use as the companion diode for  
IGBTs and MOSFETs. In addition to ultrafast recovery time,  
the HEXFRED® product line features extremely low values of  
peak recovery current (IRRM) and does not exhibit any  
tendency to “snap-off” during the tb portion of recovery. The  
HEXFRED features combine to offer designers a rectifier  
with lower noise and significantly lower switching losses in  
both the diode and the switching transistor. These  
HEXFRED advantages can help to significantly reduce  
snubbing, component count and heatsink sizes. The  
HEXFRED VS-HFA30TA60CS is ideally suited for  
applications in power supplies and power conversion  
systems (such as inverters), motor drives, and many other  
similar applications where high speed, high efficiency is  
needed.  
VR  
VF at 15 A at 25 °C  
IF(AV)  
600 V  
1.7 V  
2 x 15 A  
19 ns  
t
rr (typical)  
TJ (maximum)  
rr (typical)  
dI(rec)M/dt (typical) at 125 °C  
RRM (typical)  
150 °C  
80 nC  
Q
160 A/μs  
4.0 A  
I
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
VR  
600  
V
per leg  
per device  
15  
Maximum continuous forward current  
IF  
TC = 100 °C  
30  
A
Single pulse forward current  
IFSM  
IFRM  
150  
Maximum repetitive forward current  
60  
TC = 25 °C  
74  
29  
Maximum power dissipation  
PD  
°C  
W
TC = 100 °C  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
Document Number: 94071  
Revision: 22-Feb-10  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1

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