HFA30TA60CSTRR

更新时间： 2024-01-27 22:34:39

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英飞凌 - INFINEON		整流二极管局域网超快软恢复二极管快速软恢复二极管
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HFA30TA60CSTRR 数据手册

Bulletin PD -2.335 rev. A 11/00

HFA30TA60C

HEXFRED

Ultrafast,SoftRecoveryDiode

Features

V_R= 600V

V_F(typ.)* = 1.2V

I_F(AV)= 15A

Q_rr(typ.)= 80nC

I_RRM(typ.) = 4.0A

t_rr(typ.) = 19ns

•

Ultrafast Recovery

Ultrasoft Recovery

Very Low I_RRM

Very Low Q_rr

Guaranteed Avalanche

Specified at Operating Conditions

Benefits

•

Reduced RFI and EMI

di_(rec)M/dt (typ.)* = 160A/µs

Reduced Power Loss in Diode and Switching

Transistor

•

Higher Frequency Operation

Reduced Snubbing

Reduced Parts Count

Description

International Rectifier's HFA30TA60C is a state of the art center tap ultra fast

recovery diode. Employing the latest in epitaxial construction and advanced

processing techniques it features

a superb combination of characteristics

TO-220AB

which result in performance which is unsurpassed by any rectifier previously

available. With basic ratings of 600 volts and 15 amps per Leg continuous

current, the HFA30TA60C is especially well suited for use as the companion

diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the

HEXFRED product line features extremely low values of peak recovery current

(I_RRM) and does not exhibit any tendency to "snap-off" during the t_bportion of

recovery. The HEXFRED features combine to offer designers a rectifier with

lower noise and significantly lower switching losses in both the diode and the

switching transistor. These HEXFRED advantages can help to significantly

reduce snubbing, component count and heatsink sizes. The HEXFRED

HFA30TA60C is ideally suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and many other similar

applications where high speed, high efficiency is needed.

Absolute Maximum Ratings (per Leg)

Parameter

Max

Units

V_R

Cathode-to-Anode Voltage

600

I_F@ T_C= 25°C

I_F@ T_C= 100°C

I_FSM

Continuous Forward Current

Single Pulse Forward Current

Maximum Repetitive Forward Current

Maximum Power Dissipation

150

I_FRM

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

Storage Temperature Range

-55 to +150

T_STG

* 125°C

12 3 4 5 6

中文翻译

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