HFA30TA60CS

更新时间： 2024-11-29 04:21:31

品牌	Logo	应用领域
英飞凌 - INFINEON		整流二极管瞄准线超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
6页	166K
描述
Ultrafast, Soft Recovery Diode

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数据手册

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HFA30TA60CS 数据手册

Bulletin PD-20374 01/01

HFA30TA60CS

HEXFRED

Ultrafast, Soft Recovery Diode

V_R= 600V

V_F(typ.)* = 1.2V

I_F(AV)= 15A

Q_rr(typ.)= 80nC

I_RRM(typ.) = 4.0A

t_rr(typ.) = 19ns

Features

• Ultrafast Recovery

• Ultrasoft Recovery

• Very Low I_RRM

• Very Low Q_rr

• Specified at Operating Conditions

Benefits

• Reduced RFI and EMI

• Reduced Power Loss in Diode and Switching

Transistor

di_(rec)M/dt (typ.)* = 160A/µs

• Higher Frequency Operation

• Reduced Snubbing

• Reduced Parts Count

Description

International Rectifier's HFA30TA60CS is a state of the art center tap ultra fast

recovery diode. Employing the latest in epitaxial construction and advanced

D²Pak

processing techniques it features

a superb combination of characteristics

which result in performance which is unsurpassed by any rectifier previously

available. With basic ratings of 600 volts and 15 amps per Leg continuous

current, the HFA30TA60CS is especially well suited for use as the companion

diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the

HEXFRED product line features extremely low values of peak recovery current

(I_RRM) and does not exhibit any tendency to "snap-off" during the t_bportion of

recovery. The HEXFRED features combine to offer designers a rectifier with

lower noise and significantly lower switching losses in both the diode and the

switching transistor. These HEXFRED advantages can help to significantly

reduce snubbing, component count and heatsink sizes. The HEXFRED

HFA30TA60Cs is ideally suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and many other similar

applications where high speed, high efficiency is needed.

Absolute Maximum Ratings (per Leg)

Parameter

Max

Units

V_R

Cathode-to-Anode Voltage

600

I_F@ T_C= 100°C Continuous Forward Current

I_FSM

I_FRM

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

T_STG

Single Pulse Forward Current

Maximum Repetitive Forward Current

Maximum Power Dissipation

150

Operating Junction and

Storage Temperature Range

-55 to +150

* 125°C

12 3 4 5 6

中文翻译

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