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HFA15TB60STRLPBF PDF预览

HFA15TB60STRLPBF

更新时间: 2024-11-12 13:08:19
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威世 - VISHAY 二极管瞄准线功效局域网超快软恢复二极管
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HFA15TB60STRLPBF 数据手册

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HFA15TB60/HFA15TB60-1  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 15 A  
FEATURES  
• Ultrafast recovery  
• Ultrasoft recovery  
• Very low IRRM  
HFA15TB60  
HFA15TB60-1  
• Very low Qrr  
• Specified at operating conditions  
• Designed and qualified for industrial level  
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
Base  
cathode  
2
2
• Reduced parts count  
3
1
N/C  
DESCRIPTION  
1
3
Cathode  
Anode  
Anode  
HFA15TB60 is a state of the art ultrafast recovery diode.  
Employing the latest in epitaxial construction and advanced  
processing techniques it features a superb combination of  
characteristics which result in performance which is  
unsurpassed by any rectifier previously available. With basic  
ratings of 600 V and 15 A continuous current, the  
HFA15TB60 is especially well suited for use as the  
companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the tb  
portion of recovery. The HEXFRED features combine to offer  
designers a rectifier with lower noise and significantly lower  
switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED HFA15TB60 is ideally suited  
for applications in power supplies and power conversion  
systems (such as inverters), motor drives, and many other  
similar applications where high speed, high efficiency is  
needed.  
TO-220AC  
TO-262  
PRODUCT SUMMARY  
VR  
VF at 15 A at 25 °C  
IF(AV)  
600 V  
1.7 V  
15 A  
trr (typical)  
TJ (maximum)  
Qrr  
19 ns  
150 °C  
84 nC  
188 A/µs  
dI(rec)M/dt  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
600  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
15  
IFSM  
IFRM  
150  
A
Maximum repetitive forward current  
60  
TC = 25 °C  
74  
29  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
Document Number: 93063  
Revision: 30-Jul-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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