HFA15TB60/HFA15TB60-1
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 15 A
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low IRRM
HFA15TB60
HFA15TB60-1
• Very low Qrr
• Specified at operating conditions
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
Base
cathode
2
2
• Reduced parts count
3
1
N/C
DESCRIPTION
1
3
Cathode
Anode
Anode
HFA15TB60 is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 600 V and 15 A continuous current, the
HFA15TB60 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the tb
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA15TB60 is ideally suited
for applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
TO-220AC
TO-262
PRODUCT SUMMARY
VR
VF at 15 A at 25 °C
IF(AV)
600 V
1.7 V
15 A
trr (typical)
TJ (maximum)
Qrr
19 ns
150 °C
84 nC
188 A/µs
dI(rec)M/dt
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
600
V
Maximum continuous forward current
Single pulse forward current
IF
TC = 100 °C
15
IFSM
IFRM
150
A
Maximum repetitive forward current
60
TC = 25 °C
74
29
Maximum power dissipation
PD
W
T
C = 100 °C
Operating junction and storage temperature range
TJ, TStg
- 55 to + 150
°C
Document Number: 93063
Revision: 30-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1