Datasheet > HFA16PB120PBF_11

HFA16PB120PBF_11

更新时间： 2024-09-24 10:47:47

品牌	Logo	应用领域
威世 - VISHAY		二极管超快软恢复二极管
页数	文件大小	规格书
8页	149K
描述
HEXFRED Ultrafast Soft Recovery Diode, 16 A

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HFA16PB120PBF_11 数据手册

VS-HFA16PB120PbF

Vishay Semiconductors

HEXFRED^®

Ultrafast Soft Recovery Diode, 16 A

FEATURES

• Ultrafast and ultrasoft recovery

• Very low I_RRMand Q_rr

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

Cathode

to base

• Reduced parts count

DESCRIPTION

VS-HFA16PB120PbF is a state of the art ultrafast recovery

diode. Employing the latest in epitaxial construction and

advanced processing techniques it features a superb

combination of characteristics which result in performance

which is unsurpassed by any rectifier previously available.

With basic ratings of 1200 V and 16 A continuous current, the

VS-HFA16PB120PbF is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to

ultrafast recovery time, the HEXFRED^®product line features

extremely low values of peak recovery current (I_RRM) and

does not exhibit any tendency to “snap-off” during the

t_bportion of recovery. The HEXFRED features combine to

offer designers a rectifier with lower noise and significantly

lower switching losses in both the diode and the switching

transistor. These HEXFRED advantages can help to

significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED VS-HFA16PB120PbF is

ideally suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high

efficiency is needed.

Anode

Cathode

TO-247AC modified

PRODUCT SUMMARY

Package

TO-247AC modified (2 pins)

I_F(AV)

16 A

1200 V

3.0 V

V_R

V_Fat I_F

_rr(typ.)

30 ns

T_Jmax.

150 °C

Single die

Diode variation

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_R

TEST CONDITIONS

VALUES

UNITS

Cathode to anode voltage

1200

Maximum continuous forward current

Single pulse forward current

I_F

T_C= 100 °C

I_FSM

I_FRM

190

Maximum repetitive forward current

151

T_C= 25 °C

Maximum power dissipation

P_D

_C= 100 °C

Operating junction and storage temperature range

T_J, T_Stg

- 55 to + 150

°C

Document Number: 94057

Revision: 23-May-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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与HFA16PB120PBF_11相关器件

型号	品牌	获取价格	描述	数据表
HFA16TA60C	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 2 x 8 A
HFA16TA60C	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFA16TA60C-002	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 16A, Silicon,
HFA16TA60C-002PBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 16A, Silicon,
HFA16TA60C-003	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 16A, Silicon,
HFA16TA60C-003PBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 16A, Silicon,
HFA16TA60C-004	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 16A, Silicon,
HFA16TA60C-004PBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 16A, Silicon,
HFA16TA60C-005	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 16A, Silicon
HFA16TA60C-006PBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 16A, Silicon,

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