HFA16PB120PBF

更新时间： 2024-09-24 04:21:31

品牌	Logo	应用领域
英飞凌 - INFINEON		整流二极管局域网超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
6页	177K
描述
Ultrafast, Soft Recovery Diode

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HFA16PB120PBF 数据手册

PD - 95683A

HFA16PB120PbF

HEXFRED^TM

Ultrafast,SoftRecoveryDiode

BASE

CATHODE

V_R= 1200V

V_F(typ.)* = 2.3V

I_F(AV)= 16A

Features

Ultrafast Recovery

Ultrasoft Recovery

Very Low I_RRM

Q_rr(typ.)= 260nC

I_RRM(typ.) = 5.8A

t_rr(typ.) = 30ns

Very Low Q_rr

Specified at Operating Conditions

Lead-Free

Benefits

Reduced RFI and EMI

Reduced Power Loss in Diode and Switching

Transistor

ANODE

CATHODE

di_(rec)M/dt (typ.)* = 76A/µs

Higher Frequency Operation

Reduced Snubbing

Reduced Parts Count

Description

International Rectifier's HFA16PB120 is a state of the art ultra fast recovery

diode. Employing the latest in epitaxial construction and advanced processing

techniques it features a superb combination of characteristics which result in

performance which is unsurpassed by any rectifier previously available. With

basic ratings of 1200 volts and 16 amps continuous current, the HFA16PB120

is especially well suited for use as the companion diode for IGBTs and

MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line

features extremely low values of peak recovery current (I_RRM) and does not

TO-247AC(Modified)

exhibit any tendency to "snap-off" during the t_bportion of recovery. The

HEXFRED features combine to offer designers a rectifier with lower noise and

significantly lower switching losses in both the diode and the switching transistor.

These HEXFRED advantages can help to significantly reduce snubbing,

component count and heatsink sizes. The HEXFRED HFA16PB120 is ideally

suited for applications in power supplies and power conversion systems (such

as inverters), motor drives, and many other similar applications where high

speed, high efficiency is needed.

Absolute Maximum Ratings

Parameter

Max

Units

V_R

Cathode-to-Anode Voltage

1200

I_F@ T_C= 25°C

I_F@ T_C= 100°C

I_FSM

Continuous Forward Current

Single Pulse Forward Current

Maximum Repetitive Forward Current

Maximum Power Dissipation

190

I_FRM

P_D@ T_C= 25°C

151

°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

* 125°C

www.irf.com

11/2/04

12 3 4 5 6

中文翻译

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与HFA16PB120PBF相关器件

型号	品牌	获取价格	描述	数据表
HFA16PB120PBF_11	VISHAY	获取价格	HEXFRED Ultrafast Soft Recovery Diode, 16 A
HFA16TA60C	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 2 x 8 A
HFA16TA60C	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFA16TA60C-002	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 16A, Silicon,
HFA16TA60C-002PBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 16A, Silicon,
HFA16TA60C-003	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 16A, Silicon,
HFA16TA60C-003PBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 16A, Silicon,
HFA16TA60C-004	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 16A, Silicon,
HFA16TA60C-004PBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 16A, Silicon,
HFA16TA60C-005	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 16A, Silicon

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