HFA16PA60C

更新时间： 2024-09-23 22:51:19

品牌	Logo	应用领域
英飞凌 - INFINEON		整流二极管瞄准线局域网超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
6页	169K
描述
Ultrafast, Soft Recovery Diode

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HFA16PA60C 数据手册

Bulletin PD-2.606 rev. B 05/01

HFA16PA60C

HEXFRED

Ultrafast,SoftRecoveryDiode

Features

V_R= 600V

V_F= 1.7V

• Ultrafast Recovery

• Ultrasoft Recovery

• Very Low I_RRM

• Very Low Q_rr

Q_rr* = 65nC

• Specified at Operating Conditions

Benefits

di_(rec)M/dt * = 240A/µs

• Reduced RFI and EMI

• Reduced Power Loss in Diode and Switching

Transistor

* 125°C

• Higher Frequency Operation

• Reduced Snubbing

• Reduced Parts Count

Description

International Rectifier's HFA16PA60C is a state of the art center tap ultra fast

recovery diode. Employing the latest in epitaxial construction and advanced

processing techniques it features a superb combination of characteristics which

result in performance which is unsurpassed by any rectifier previously available.

With basic ratings of 600 volts and 8 amps per Leg continuous current, the

HFA16PA60C is especially well suited for use as the companion diode for IGBTs

and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product

line features extremely low values of peak recovery current (I_RRM) and does not

TO-247AC

exhibit any tendency to "snap-off" during the t_bportion of recovery. The

HEXFRED features combine to offer designers a rectifier with lower noise and

significantly lower switching losses in both the diode and the switching transistor.

These HEXFRED advantages can help to significantly reduce snubbing,

component count and heatsink sizes. The HEXFRED HFA16PA60C is ideally

suited for applications in power supplies and power conversion systems (such

as inverters), motor drives, and many other similar applications where high

speed, high efficiency is needed.

Absolute Maximum Ratings (per Leg)

Parameter

Max

600

Units

V_R

Cathode-to-Anode Voltage

I_F@ T_C= 100°C

Continuous Forward Current (per Leg)

Single Pulse Forward Current

Maximum Repetitive Forward Current

Maximum Power Dissipation

Operating Junction and

I_FSM

I_FRM

P_D@ T_C= 25°C

P_D@ T_C= 100°C

T_J

T_STG

-55 to +150

°C

Storage Temperature Range

www.irf.com

12 3 4 5 6

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