VS-HFA16PA60CPbF
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 2 x 8 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Compliant to RoHS Directive 2002/95/EC
Base
common
cathode
• Designed and qualified for industrial level
2
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
1
3
TO-247AC
Anode
Anode
2
2
1
DESCRIPTION
Common
cathode
VS-HFA16PA60CPbF is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 8 A per
leg continuous current, the VS-HFA16PA60CPbF is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED® product line features extremely low values of
peak recovery current (IRRM) and does not exhibit any
tendency to “snap-off” during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA16PA60CPbF is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
PRODUCT SUMMARY
Package
TO-247AC
2 x 8 A
600 V
IF(AV)
VR
VF at IF
1.7 V
t
rr (typ.)
18 ns
TJ max.
150 °C
Single die
Diode variation
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
VR
600
V
per leg
per device
8
Maximum continuous forward current
IF
TC = 100 °C
16
A
Single pulse forward current
IFSM
IFRM
60
Maximum repetitive forward current
24
TC = 25 °C
36
14
Maximum power dissipation
PD
W
TC = 100 °C
Operating junction and storage temperature range
TJ, TStg
- 55 to + 150
°C
Document Number: 94056
Revision: 23-May-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000