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HFA16PA60CPBF_11 PDF预览

HFA16PA60CPBF_11

更新时间: 2024-09-24 10:47:47
品牌 Logo 应用领域
威世 - VISHAY 二极管超快软恢复二极管
页数 文件大小 规格书
8页 207K
描述
HEXFRED Ultrafast Soft Recovery Diode, 2 x 8 A

HFA16PA60CPBF_11 数据手册

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VS-HFA16PA60CPbF  
Vishay Semiconductors  
HEXFRED®  
Ultrafast Soft Recovery Diode, 2 x 8 A  
FEATURES  
• Ultrafast and ultrasoft recovery  
• Very low IRRM and Qrr  
• Compliant to RoHS Directive 2002/95/EC  
Base  
common  
cathode  
• Designed and qualified for industrial level  
2
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
• Reduced parts count  
1
3
TO-247AC  
Anode  
Anode  
2
2
1
DESCRIPTION  
Common  
cathode  
VS-HFA16PA60CPbF is a state of the art center tap ultrafast  
recovery diode. Employing the latest in epitaxial  
construction and advanced processing techniques it  
features a superb combination of characteristics which  
result in performance which is unsurpassed by any rectifier  
previously available. With basic ratings of 600 V and 8 A per  
leg continuous current, the VS-HFA16PA60CPbF is  
especially well suited for use as the companion diode for  
IGBTs and MOSFETs. In addition to ultrafast recovery time,  
the HEXFRED® product line features extremely low values of  
peak recovery current (IRRM) and does not exhibit any  
tendency to “snap-off” during the tb portion of recovery. The  
HEXFRED features combine to offer designers a rectifier  
with lower noise and significantly lower switching losses in  
both the diode and the switching transistor. These  
HEXFRED advantages can help to significantly reduce  
snubbing, component count and heatsink sizes. The  
HEXFRED VS-HFA16PA60CPbF is ideally suited for  
applications in power supplies and power conversion  
systems (such as inverters), motor drives, and many other  
similar applications where high speed, high efficiency is  
needed.  
PRODUCT SUMMARY  
Package  
TO-247AC  
2 x 8 A  
600 V  
IF(AV)  
VR  
VF at IF  
1.7 V  
t
rr (typ.)  
18 ns  
TJ max.  
150 °C  
Single die  
Diode variation  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
VR  
600  
V
per leg  
per device  
8
Maximum continuous forward current  
IF  
TC = 100 °C  
16  
A
Single pulse forward current  
IFSM  
IFRM  
60  
Maximum repetitive forward current  
24  
TC = 25 °C  
36  
14  
Maximum power dissipation  
PD  
W
TC = 100 °C  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
Document Number: 94056  
Revision: 23-May-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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