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HFA16PA120CPBF

更新时间： 2024-09-26 10:47:47
品牌 Logo 应用领域
威世 - VISHAY 整流二极管瞄准线局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
7页 129K
描述
Ultrafast Soft Recovery Diode, 2 x 8 A

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HFA16PA120CPBF 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：TO-247AC
包装说明：R-PSFM-T3针数：3
Reach Compliance Code：compliantHTS代码：8541.10.00.80
风险等级：5.57Is Samacsys：N
其他特性：LOW POWER LOSS, LOW NOISE应用：ULTRA FAST SOFT RECOVERY
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：4.3 VJEDEC-95代码：TO-247AC
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
最大非重复峰值正向电流：130 A元件数量：2
相数：1端子数量：3
最高工作温度：150 °C最低工作温度：-55 °C
最大输出电流：8 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT APPLICABLE最大功率耗散：73.5 W
认证状态：Not Qualified最大重复峰值反向电压：1200 V
最大反向恢复时间：0.095 µs子类别：Rectifier Diodes
表面贴装：NO端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT APPLICABLEBase Number Matches：1

HFA16PA120CPBF 数据手册

 浏览型号HFA16PA120CPBF的Datasheet PDF文件第2页浏览型号HFA16PA120CPBF的Datasheet PDF文件第3页浏览型号HFA16PA120CPBF的Datasheet PDF文件第4页浏览型号HFA16PA120CPBF的Datasheet PDF文件第5页浏览型号HFA16PA120CPBF的Datasheet PDF文件第6页浏览型号HFA16PA120CPBF的Datasheet PDF文件第7页 
HFA16PA120C  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 2 x 8 A  
FEATURES  
• Ultrafast recovery  
• Ultrasoft recovery  
• Very low IRRM  
• Very low Qrr  
• Specified at operating conditions  
• Designed and qualified for industrial level  
Base  
common  
cathode  
2
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
1
3
• Reduced parts count  
TO-247AC  
Anode  
1
Anode  
2
2
DESCRIPTION  
Common  
cathode  
HFA16PA120C is a state of the art ultrafast recovery diode.  
Employing the latest in epitaxial construction and advanced  
processing techniques it features a superb combination of  
characteristics which result in performance which is  
unsurpassed by any rectifier previously available. With basic  
ratings of 1200 V and 8 A per leg continuous current, the  
HFA16PA120C is especially well suited for use as the  
companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the  
tb portion of recovery. The HEXFRED features combine to  
offer designers a rectifier with lower noise and significantly  
lower switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED HFA16PA120C is ideally  
suited for applications in power supplies and power  
conversion systems (such as inverters), motor drives, and  
many other similar applications where high speed, high  
efficiency is needed.  
PRODUCT SUMMARY  
VR per leg  
1200 V  
3.3 V  
VF at 8 A at 25 °C  
IF(AV)  
2 x 8 A  
28 ns  
t
rr (typical)  
TJ (maximum)  
150 °C  
4.5 A  
I
RRM (typical) per leg  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
VR  
1200  
V
per leg  
per device  
8
Maximum continuous forward current  
IF  
TC = 100 °C  
16  
130  
A
Single pulse forward current  
IFSM  
IFRM  
Maximum repetitive forward current  
32  
TC = 25 °C  
73.5  
Maximum power dissipation  
PD  
W
TC = 100 °C  
29  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
Document Number: 93069  
Revision: 30-Jul-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1
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