Datasheet > HF50C120ACEPBF

HF50C120ACEPBF

更新时间： 2024-10-28 14:42:31

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管
页数	文件大小	规格书
1页	176K
描述
Rectifier Diode, 1 Phase, 1 Element, Silicon, 5 INCH, WAFER

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HF50C120ACEPBF 数据手册

Preliminary Data Sheet PD-20598 rev. B 11/98

HF50C120ACE

Hexfred Die in Wafer Form

1200 V

Size 50

5" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

Description

Guaranteed (Min/Max)

Test Conditions

T_J= 25°C, I_F= 16A

V_FM

Forward Voltage

3.0V Max.

BV_R

I_RM

Reverse Breakdown Voltage

Reverse Leakage Current

1200V Min.

20µA Max.

T_J= 25°C, I_R= 200µA

T_J= 25°C, V_R= 1200V

Mechanical Data

Nominal Back Metal Composition, Thickness

Nominal Front Metal Composition, Thickness

Chip Dimensions

Cr-Ni-Ag ( 1kA-4kA-6kA )

99% Al, 1% Si (3 microns)

0.257" x 0.257"

Wafer Diameter

Wafer Thickness

125mm, with std. < 100 > flat

.015" ± .003"

Relevant Die Mechanical Dwg. Number

MinimumStreetWidth

01-5168

100 Microns

Reject Ink Dot Size

0.25mmDiameterMinimum

Store in original container, in dessicated

nitrogen, with no contamination

Recommended Storage Environment

Reference Standard IR packaged part ( for design ) :HFA30PB120

Die Outline

NOTES :

1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES )

2. CONTROLLING DIMENSION : ( INCH )

3. DIMENSIONALTOLERANCES:

BONDING PADS : <0.635TOLERANCE=±0.013

WIDTH

< (.0250)TOLERANCE=±(.0005)

>0.635TOLERANCE=±0.025

>(.0250)TOLERANCE=±(.0010)

< 1.270TOLRANCE=±0.102

< (.050) TOLERANCE = ± (.004)

>1.270 TOLERANCE=±0.203

> (.050) TOLERANCE = ± (.008)

LENGTH

OVERALLDIE

WIDTH

LENGTH

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