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HF50E060ACE PDF预览

HF50E060ACE

更新时间: 2024-10-28 20:08:11
品牌 Logo 应用领域
威世 - VISHAY 软恢复二极管
页数 文件大小 规格书
3页 74K
描述
Rectifier Diode, 1 Phase, 1 Element, 50A, 600V V(RRM), Silicon, DIE-2

HF50E060ACE 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:DIE包装说明:DIE-2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.40
风险等级:5.84应用:SOFT RECOVERY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.33 V
JESD-30 代码:S-XUUC-N2元件数量:1
相数:1端子数量:2
最大输出电流:50 A封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:UNCASED CHIP
认证状态:Not Qualified最大重复峰值反向电压:600 V
子类别:Rectifier Diodes表面贴装:YES
端子形式:NO LEAD端子位置:UPPER
Base Number Matches:1

HF50E060ACE 数据手册

 浏览型号HF50E060ACE的Datasheet PDF文件第2页浏览型号HF50E060ACE的Datasheet PDF文件第3页 
PD - 94720  
HF50E060ACE  
Hexfred Die in Wafer Form  
600V  
Features  
• GEN3 Hexfred Technology  
• Low VF  
• Low IRR  
• Low tRR  
I
F(nom)=50A  
V
F(typ)= 1.5V @ IF(nom) @ 25°C  
• Soft Reverse Recovery  
Power Supply Antiparallel Diode  
125mm Wafer  
Benefits  
• Benchmark Efficiency for UPS and Welding  
Applications  
• Rugged Transient Performance  
• Low EMI  
• Excellent Current Sharing in Parallel Operation  
• Qualified for Industrial Market  
Electrical Characteristics (Wafer Form)  
Parameter  
Description  
Guaranteed (min, max)  
TestConditions  
VF  
Forward Voltage Drop  
0.94V min, 1.33V max IC = 10A, TJ = 25°C  
BVR  
IRM  
Reverse Breakdown Voltage  
Reverse Leakage Current  
600V min  
20µA max  
TJ = 25°C, IR = 1mA  
TJ = 25°C, VR = 600V  
Mechanical Data  
Nominal Backmetal Composition, (Thickness)  
Nominal Front Metal Composition, (Thickness)  
Dimensions  
Cr- Ni - Ag, (1kA - 4kA - 6kA)  
99% Al/1% Si, (3µm)  
0.170'' x 0.170"  
Wafer Diameter  
125mm, with std. < 100 > flat  
381µm, +/-15µm  
Wafer Thickness, Tolerance  
Relevant Die Mechanical Dwg. Number  
Minimum Street Width  
01 - 5645  
100µm  
Reject Ink Dot Size  
0.25mm diameter minimum  
Consistent throughout same wafer lot  
Store in original container, in dessicated  
nitrogen, with no contamination  
For optimum electrical results, die attach  
temperature should not exceed 300°C  
Ink Dot Location  
Recommended Storage Environment  
Recommended Die Attach Conditions  
Die Outline  
07/01/03  
Document Number: 93810  
www.vishay.com  
1

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