Datasheet > HF51C120ACE

HF51C120ACE

更新时间： 2024-11-28 23:55:43

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HF51C120ACE 数据手册

Preliminary Data Sheet PD-20609 11/98

HF51C120ACE

Hexfred Die in Wafer Form

1200 V

Size 51

5" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

Description

Guaranteed (Min/Max)

Test Conditions

T_J= 25°C, I_F= 16A

V_FM

Forward Voltage

3V Max.

1200V Min.

20µA Max.

BV_R

Reverse Breakdown Voltage

Reverse Leakage Current

T_J= 25°C, I_R= 200µA

T_J= 25°C, V_R= 1200V

I_RM

Mechanical Data

Nominal Back Metal Composition, Thickness

Nominal Front Metal Composition, Thickness

Chip Dimensions

Cr-Ni-Ag ( 1kA-4kA-6kA )

99% Al, 1% Si (3 microns)

0.340" x 0.195"

Wafer Diameter

125mm, with std. < 100 > flat

.015" ± .003"

Wafer Thickness

Relevant Die Mechanical Dwg. Number

MinimumStreetWidth

01-5172

100 Microns

Reject Ink Dot Size

0.25mmDiameterMinimum

Store in original container, in dessicated

nitrogen, with no contamination

Recommended Storage Environment

Reference Standard IR packaged part ( for design ) : HFA30PB120

Die Outline

NOTES:

1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES )

2. CONTROLLING DIMENSION : ( INCH )

3. DIMENSIONALTOLERANCES:

BONDING PADS : <0.635TOLERANCE=± 0.013

WIDTH

<(.0250)TOLERANCE=± (.0005)

>0.635TOLERANCE=± 0.025

>(.0250)TOLERANCE=± (.0010)

< 1.270TOLRANCE=± 0.102

< (.050) TOLERANCE = ± (.004)

>1.270 TOLERANCE=± 0.203

> (.050) TOLERANCE = ± (.008)

LENGTH

OVERALLDIE

WIDTH

LENGTH

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