5秒后页面跳转
HF50D060ACE PDF预览

HF50D060ACE

更新时间: 2024-11-29 21:11:15
品牌 Logo 应用领域
英飞凌 - INFINEON 功效二极管
页数 文件大小 规格书
2页 27K
描述
Rectifier Diode, 1 Phase, 1 Element, 50A, Silicon, 125 MM, WAFER

HF50D060ACE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-XUUC-NReach Compliance Code:compliant
HTS代码:8541.10.00.40风险等级:5.75
应用:EFFICIENCY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-XUUC-N元件数量:1
相数:1最大输出电流:50 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:UNCASED CHIP峰值回流温度(摄氏度):260
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:40Base Number Matches:1

HF50D060ACE 数据手册

 浏览型号HF50D060ACE的Datasheet PDF文件第2页 
PD - 94380  
HF50D060ACE  
Hexfred Die in Wafer Form  
600V  
Features  
GEN3 Hexfred Technology  
Low VF  
Low IRR  
Low tRR  
I
F(nom)=50A  
V
F(typ)= 1.35V @ IF(nom) @ 25°C  
Soft Reverse Recovery  
Motor Control Antiparallel Diode  
125mm Wafer  
Benefits  
Benchmark Efficiency for Motor Control Applications  
Rugged Transient Performance  
Low EMI  
Excellent Current Sharing in Parallel Operation  
Qualified for Industrial Market  
Electrical Characteristics (Wafer Form)  
Parameter  
Description  
Guaranteed (min, max)  
TestConditions  
VF  
Forward Voltage Drop  
0.85V min, 1.2V max  
600V min  
IC = 10A, TJ = 25°C  
BVR  
IRM  
Reverse Breakdown Voltage  
Reverse Leakage Current  
TJ = 25°C, IR = 1mA  
20µA max  
TJ = 25°C, VR = 600V  
Mechanical Data  
Nominal Backmetal Composition, (Thickness)  
Nominal Front Metal Composition, (Thickness)  
Dimensions  
Cr- Ni - Ag, (1kA - 4kA - 6kA)  
99% Al/1% Si, (3µm)  
0.170'' x 0.170"  
Wafer Diameter  
125mm, with std. < 100 > flat  
381µm, +/-15µm  
Wafer Thickness, Tolerance  
Relevant Die Mechanical Dwg. Number  
Minimum Street Width  
01 - 5512  
100µm  
Reject Ink Dot Size  
0.25mm diameter minimum  
Consistent throughout same wafer lot  
Store in original container, in dessicated  
nitrogen, with no contamination  
For optimum electrical results, die attach  
temperature should not exceed 300°C  
Ink Dot Location  
Recommended Storage Environment  
Recommended Die Attach Conditions  
Die Outline  
www.irf.com  
1
04/19/02  

与HF50D060ACE相关器件

型号 品牌 获取价格 描述 数据表
HF50D120ACE INFINEON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 50A, Silicon, 125 MM, WAFER
HF50E060ACE VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 50A, 600V V(RRM), Silicon, DIE-2
HF5-12F ASI

获取价格

NPN SILICON RF POWER TRANSISTOR
HF5-12F_1 ASI

获取价格

NPN SILICON RF POWER TRANSISTOR
HF5-12S ASI

获取价格

NPN SILICON RF POWER TRANSISTOR
HF51A060ACE INTERFET

获取价格

Hexfred Die in Wafer Form
HF51A060ACEPBF INFINEON

获取价格

Rectifier Diode, 1 Phase, 1 Element, Silicon, 5 INCH, WAFER
HF51C120ACE ETC

获取价格

HF538902N HOPERF

获取价格

SAW FILTER
HF538902NSIP5D HOPERF

获取价格

SAW FILTER