Datasheet > HER108(G)

HER108(G)

更新时间： 2024-10-30 14:51:35

品牌	Logo	应用领域
鲁光 - LGE		整流二极管高效整流二极管
页数	文件大小	规格书
2页	1057K
描述
高效整流二极管

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中文翻译

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技术参数
数据手册

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HER108(G) 技术参数

Case Style：	DO-41	Maximum average forward rectified current：	1
Maximum recurrent peak reverse voltage：	1000	Peak forward surge current：	30
Maximum instantaneous forward voltage：	1.7	Maximum reverse current：	5.0
TRR(nS)：	75	class：	Diodes

HER108(G) 数据手册

HER101G-HER108G

1.0AMP. Glass Passivated High Efficient Rectifiers

DO-41

Features

ꢀ

Glass passivated chip junction.

High efficiency, Low VF

High current capability

High reliability

High surge current capability

For use in low voltage, high frequency inventor, free

wheeling, and polarity protection application.

Mechanical Data

ꢀ

Case: Molded plastic DO-41

Epoxy: UL 94V0 rate flame retardant

Polarity: Color band denotes cathode

High temperature soldering guaranteed:

260 C/10 seconds/.375”,(9.5mm) lead

Dimensions in inches and (millimeters)

ꢀ

lengths at 5 lbs., (2.3kg) tension

Weight: 0.35 gram

Maximum Ratings and Electrical Characteristics

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

HER HER HER HER

Symbol

Type Number

Units

105G 106G 107G 108G

101G 102G 103G 104G

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

100 200 300 400 600 800 1000

70 140 210 280 420 560 700

100 200 300 400 600 800 1000

V_RRM

V_RMS

V_DC

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current .375 (9.5mm) Lead Length

I_(AV)

1.0

@T_A= 55 C

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated

Load (JEDEC method )

I_FSM

Maximum Instantaneous Forward Voltage

@ 1.0A

V_F

1.0

1.3

1.7

Maximum DC Reverse Current

@T_A=25 C at Rated DC Blocking Voltage

I_R

5.0

@ T_A=125 C

150

Maximum Reverse Recovery Time ( Note 1 )

Typical Junction Capacitance ( Note 2 )

Typical thermal resistance

Trr

R_θJA

C/W

θJC

T_J

Operating Temperature Range

Storage Temperature Range

-65 to +150

T_STG

1. Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A

2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.

3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.

Notes:

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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与HER108(G)相关器件

型号	品牌	获取价格	描述	数据表
HER108-B	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2
HER108B-G	COMCHIP	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM),
HER108-BP	MCC	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC, PAC
HER108G	BL Galaxy Electrical	获取价格	GLASS PASSIVATED RECTIFIER
HER108G	UNIOHM	获取价格	1.0 AMP GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS
HER108G	GOOD-ARK	获取价格	HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER
HER108G	GOOD-ARK	获取价格	1.0 AMP. GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS
HER108G	LUNSURE	获取价格	GLASS PASSIVATED HIGH EFFICIENCY RECTIFIER
HER108G	RECTRON	获取价格	VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
HER108G	PINGWEI	获取价格	HIGH EFFICIENCY PLASTIC RECTIFIER

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