HER108GB-G

更新时间： 2024-10-29 07:18:03

品牌	Logo	应用领域
上华 - COMCHIP		整流二极管高效整流二极管
页数	文件大小	规格书
4页	84K
描述
High Efficiency Rectifiers

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中文翻译

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数据手册

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HER108GB-G 数据手册

High Efficiency Rectifiers

HER101G-G Thru. HER108G-G

Voltage: 50 to 1000 V

Current: 1.0 A

RoHS Device

DO-41

Features

-Glass passivated chip.

-Low forward voltage.

-High reliability.

1.000(25.40) Min.

-High surge current capability.

-High speed switching.

0.205(5.21)

0.165(4.19)

Mechanical data

0.117(2.97) DIA.

0.090(2.29) DIA.

-Case: JEDEC DO-41 molded plastic.

-Epoxy: UL 94V-0 rate flame retardant.

-Polarity: Color band denotes cathode end.

-Lead: Solderable per MIL-STD-202,

method 208 guaranteed.

1.000(25.40) Min.

0.033(0.84) DIA.

0.028(0.71) DIA.

Dimensions in inches and (millimeter)

-Mounting position: Any

-Weight: 0.321 grams

Maximum Ratings and Electrical Characteristics

Ratings at 25°C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

HER

Symbol

Parameter

Unit

101G-G 102G-G 103G-G 104G-G 105G-G 106G-G 107G-G 108G-G

Maximum repetitive peak reverse voltage

@IT = 5μA

RRM

RMS

100

200

300

400

600

800

1000

Maximum RMS voltage

140

200

210

300

280

400

420

600

560

800

700

Maximum DC blocking voltage

Maximum average forward rectified current

100

1000

I(AV)

1.0

5.0

@T =25°C

Maximum instantaneous forward

voltage at specified current

1.0

1.3

1.7

μA

°C

Maximum DC reverse current

Maximum reverse recovery time (Note 1)

Operating temperature range

Storage temperature range

-55 ~ +150

STG

NOTES:

1. Reverse recovery test conditions: IF=0.5A, IR=1.0A, IRR=0.25A(RGI circuit)

REV:A

Page 1

QW-BU010

Comchip Technology CO., LTD.

12 3 4

中文翻译

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