HER101G thru HER108G
Taiwan Semiconductor
CREAT BY ART
Glass Passivated High Efficient Rectifiers
FEATURES
- Glass passivated chip junction
- High current capability, Low VF
- High reliability
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-204AL (DO-41)
DO-204AL (DO-41)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight: 0.33 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25oC unless otherwise noted)
HER HER HER HER HER HER HER HER
101G 102G 103G 104G 105G 106G 107G 108G
PARAMETER
SYMBOL
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
300
210
300
400
280
400
600
420
600
800 1000
560 700
800 1000
V
V
V
A
Maximum DC blocking voltage
100
Maximum average forward rectified current
IF(AV)
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
A
V
Maximum instantaneous forward voltage (Note 1)
@ 1 A
VF
1.0
1.3
1.7
Maximum reverse current @ rated VR TJ=25 oC
TJ=125 oC
5
IR
μA
150
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
50
15
75
10
Trr
Cj
ns
pF
RθJC
RθJA
15
60
OC/W
Typical thermal resistance
OC
OC
Operating junction temperature range
Storage temperature range
TJ
- 55 to +150
- 55 to +150
TSTG
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1407033
Version: I14