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HER108GHA0 PDF预览

HER108GHA0

更新时间: 2024-10-30 01:08:03
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描述
Glass Passivated High Efficient Rectifiers

HER108GHA0 数据手册

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HER101G thru HER108G  
Taiwan Semiconductor  
CREAT BY ART  
Glass Passivated High Efficient Rectifiers  
FEATURES  
- Glass passivated chip junction  
- High current capability, Low VF  
- High reliability  
- High surge current capability  
- Compliant to RoHS Directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
- Halogen-free according to IEC 61249-2-21 definition  
MECHANICAL DATA  
Case: DO-204AL (DO-41)  
DO-204AL (DO-41)  
Molding compound, UL flammability classification rating 94V-0  
Base P/N with suffix "G" on packing code - green compound (halogen-free)  
Base P/N with prefix "H" on packing code - AEC-Q101 qualified  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 1A whisker test  
with prefix "H" on packing code meet JESD 201 class 2 whisker test  
Weight: 0.33 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25oC unless otherwise noted)  
HER HER HER HER HER HER HER HER  
101G 102G 103G 104G 105G 106G 107G 108G  
PARAMETER  
SYMBOL  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
300  
210  
300  
400  
280  
400  
600  
420  
600  
800 1000  
560 700  
800 1000  
V
V
V
A
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
IF(AV)  
1
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
30  
A
V
Maximum instantaneous forward voltage (Note 1)  
@ 1 A  
VF  
1.0  
1.3  
1.7  
Maximum reverse current @ rated VR TJ=25 oC  
TJ=125 oC  
5
IR  
μA  
150  
Maximum reverse recovery time (Note 2)  
Typical junction capacitance (Note 3)  
50  
15  
75  
10  
Trr  
Cj  
ns  
pF  
RθJC  
RθJA  
15  
60  
OC/W  
Typical thermal resistance  
OC  
OC  
Operating junction temperature range  
Storage temperature range  
TJ  
- 55 to +150  
- 55 to +150  
TSTG  
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle  
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.  
Document Number: DS_D1407033  
Version: I14  

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