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HER108G-K PDF预览

HER108G-K

更新时间: 2024-10-30 02:49:19
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页数 文件大小 规格书
7页 412K
描述
1A, 50V - 1000V Glass Passivated High Efficient Rectifier

HER108G-K 数据手册

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HER101G-K - HER108G-K  
Taiwan Semiconductor  
1A, 50V - 1000V Glass Passivated High Efficient Rectifier  
FEATURES  
KEY PARAMETERS  
Glass passivated chip junction  
High current capability, Low VF  
High reliability  
PARAMETER  
IF(AV)  
VRRM  
VALUE  
UNIT  
1
50 - 1000  
30  
A
V
High surge current capability  
IFSM  
A
Compliant to RoHS Directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
Halogen-free according to IEC 61249-2-21  
TJ MAX  
150  
°C  
Package  
Configuration  
DO-204AL (DO-41)  
Single die  
APPLICATIONS  
Switching mode power supply (SMPS)  
Adapters  
TV  
Monitor  
MECHANICAL DATA  
Case: DO-204AL (DO-41)  
Molding compound meets UL 94V-0 flammability rating  
Packing code with suffix "G" means green compound  
(halogen-free)  
Terminal: Pure tin plated leads, solderable per J-STD-002  
Meet JESD 201 class 1A whisker test  
Polarity: As marked  
Weight: 0.33 g (approximately)  
DO-204AL (DO-41)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
HER  
101  
G-K  
HER  
102  
G-K  
HER  
103  
G-K  
HER  
104  
G-K  
HER  
105  
G-K  
HER  
106  
G-K  
HER  
107  
G-K  
HER  
108  
G-K  
PARAMETER  
SYMBOL  
UNIT  
HER101 HER102 HER103 HER104 HER105 HER106 HER107 HER108  
Marking code on the device  
G
G
G
G
G
G
G
G
Repetitive peak reverse  
voltage  
VRRM  
50  
100  
200  
300  
400  
600  
800  
1000  
V
Reverse voltage, total rms  
value  
VR(RMS)  
IF(AV)  
35  
70  
140  
210  
280  
420  
560  
700  
V
A
Forward current  
1
Surge peak forward current,  
8.3 ms single half sine-wave  
superimposed on rated load  
per diode  
IFSM  
30  
A
Junction temperature  
Storage temperature  
TJ  
- 55 to +150  
- 55 to +150  
°C  
°C  
TSTG  
1
Version:A1703  

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