Datasheet > HAT1139H

HAT1139H

更新时间： 2024-11-11 07:02:47

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
7页	85K
描述
Silicon P Channel Power MOS FET Power Switching

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HAT1139H 数据手册

HAT1139H

Silicon P Channel Power MOS FET

Power Switching

REJ03G1244-0200

Rev.2.00

Jun.22.2005

Features

•

Capable of –4.5 V gate drive

Low drive current

High density mounting

Low on-resistance

R_DS(on)= 7.0 mΩ typ. (at V_GS= –10 V)

Outline

RENESAS Package code: PTZZ0005DA-A

(Package name: LFPAK)

1, 4 Source

2, 3 Gate

Drain

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Symbol

V_DSS

V_GSS

I_D

Ratings

–30

Unit

–25 / +20

–30

Drain current

Note1

Drain peak current

I_D(pulse)

–120

–30

Body-drain diode reverse drain current

Channel dissipation

I_DR

Pch ^Note2

Pch ^Note3

Tch

°C

Channel dissipation

Channel temperature

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. 1 Drive operation : Tc = 25°C

3. 2 Drive operation : Tc = 25°C

Rev.2.00 Jun. 22, 2005, page 1 of 6

12 3 4 5 6 7

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