生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.34 | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 8 A | 最大漏源导通电阻: | 0.037 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
HAT2019REL | RENESAS | 8A, 30V, 0.037ohm, N-CHANNEL, Si, POWER, MOSFET |
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HAT2020R | HITACHI | Silicon N Channel Power MOS FET High Speed Power Switching |
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HAT2020R | RENESAS | Silicon N Channel Power MOS FET High Speed Power Switching |
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HAT2020REL | HITACHI | Power Field-Effect Transistor, 8A I(D), 30V, 0.05ohm, N-Channel, Silicon, Metal-oxide Semi |
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HAT2020REL | RENESAS | Power Field-Effect Transistor, 8A I(D), 30V, 0.05ohm, N-Channel, Silicon, Metal-oxide Semi |
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HAT2020R-EL-E | RENESAS | Silicon N Channel Power MOS FET High Speed Power Switching |
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