Datasheet > HAT2010F

HAT2010F

更新时间： 2022-01-18 18:44:00

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HAT2010F 数据手册

HAT2010F

Silicon N Channel Power MOS FET

SOP–8

Application

Power switching

Features

• Low on–resistance

• Capable of 4V gate drive

• Low drive current

D D

7 8

D D

• High density mounting

Ordering Information

1, 3

2, 4

Source

Gate

————————————————————

5, 6, 7, 8 Drain

S 3

Hitachi Code

FP–8D

MOS2

MOS1

————————————————————

EIAJ Code

SC–527–8A

————————————————————

JEDEC Code

—

————————————————————

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

———————————————————————————————————————————

Drain to source voltage

DSS

———————————————————————————————————————————

Gate to source voltage

±20

GSS

———————————————————————————————————————————

Drain current

3.5

———————————————————————————————————————————

Drain peak current

D(pulse)

———————————————————————————————————————————

Channel dissipation

Pch***

1.5

———————————————————————————————————————————

Channel dissipation

Pch**

———————————————————————————————————————————

Channel temperature

Tch

150

°C

———————————————————————————————————————————

Storage temperature

Tstg

–55 to +150

°C

———————————————————————————————————————————

PW ≤ 10 µs, duty cycle ≤ 1 %

** 1 Drive operation

*** 2 Drive operation

When using the glass epoxy board (40 x 40 x 1.6 mm)

12 3 4 5 6

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