HAT2007F
Silicon N Channel Power MOS FET
Application
SOP–8
Power switching
synchronously Rectifier
5
6
7
8
Features
4
3
2
1
5
D D
6
7
D
8
D
• Low on–resistance
• Capable of 4V gate drive
• Low drive current
• High density mounting
4
G
1
2, 3
4
N/C
Source
Gate
Ordering Information
5, 6, 7, 8 Drain
S
2
S
3
————————————————————
Hitachi Code
FP–8D
————————————————————
EIAJ Code
SC–527–8A
————————————————————
JEDEC Code
—
————————————————————
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
V
30
V
DSS
———————————————————————————————————————————
Gate to source voltage
V
±20
V
GSS
———————————————————————————————————————————
Drain current
I
4
A
D
———————————————————————————————————————————
Drain peak current
I
*
16
A
D(pulse)
———————————————————————————————————————————
Body–drain diode reverse drain current
I
4
A
DR
———————————————————————————————————————————
Channel dissipation
Pch**
1
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
PW ≤ 10 µs, duty cycle ≤ 1 %
** When using the glass epoxy board (40 x 40 x 1.6 mm)
*