HAT1126RJ

更新时间： 2024-11-11 03:41:15

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
8页	116K
描述
Silicon P Channel Power MOS FET High Speed Power Switching

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数据手册

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HAT1126RJ 数据手册

HAT1126R, HAT1126RJ

Silicon P Channel Power MOS FET

High Speed Power Switching

REJ03G0406-0100

Rev.1.00

Sep.10.2004

Features

•

Low on-resistance

Capable of 4.5 V gate drive

High density mounting

“J” is for Automotive application

High temperature D-S leakage guarantee

Avalanche rating

Outline

SOP-8

7 8

D D

5 6

D D

1, 3

2, 4

Source

Gate

5, 6, 7, 8 Drain

S 3

MOS1

MOS2

Absolute Maximum Ratings

(Ta = 25°C)

Ratings

Item

Symbol

Unit

HAT1126R

HAT1126RJ

Drain to source voltage

Gate to source voltage

Drain current

V_DSS

V_GSS

–60

±20

I_D

–6.0

–48

Drain peak current

Avalanche current

Avalanche energy

Channel dissipation

Channel temperature

Storage temperature

I_D(pulse)^Note1

–48

Note4

I_AP

—

–6.0

3.08

Note4

E_AR

—

°C

Pch^Note2

Pch^Note3

Tch

150

Tstg

–55 to +150

Notes: 1. PW ≤ 10µs, duty cycle ≤ 1%

2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s

3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s

4. Value at Tch = 25°C, Rg ≥ 50 Ω

Rev.1.00 Sep. 10, 2004 page 1 of 7

12 3 4 5 6 7 8

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