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HAT1072H PDF预览

HAT1072H

更新时间: 2024-11-11 03:41:15
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体开关晶体管功率场效应晶体管脉冲电源开关
页数 文件大小 规格书
12页 119K
描述
Silicon P Channel Power MOS FET Power Switching

HAT1072H 技术参数

生命周期:Not Recommended包装说明:LFPAK-5
针数:5Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.25
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):40 A
最大漏源导通电阻:0.0077 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):160 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

HAT1072H 数据手册

 浏览型号HAT1072H的Datasheet PDF文件第2页浏览型号HAT1072H的Datasheet PDF文件第3页浏览型号HAT1072H的Datasheet PDF文件第4页浏览型号HAT1072H的Datasheet PDF文件第5页浏览型号HAT1072H的Datasheet PDF文件第6页浏览型号HAT1072H的Datasheet PDF文件第7页 
To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to the contents of the document, and  
these changes do not constitute any alteration to the contents of the document itself.  
Renesas Technology Home Page: http://www.renesas.com  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  

HAT1072H 替代型号

型号 品牌 替代类型 描述 数据表
HAT1072H-EL-E RENESAS

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