HAT1095C

更新时间： 2024-11-11 07:02:47

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
7页	83K
描述
Silicon P Channel MOS FET Power Switching

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HAT1095C 数据手册

HAT1095C

Silicon P Channel MOS FET

Power Switching

REJ03G1232-0500

Rev.5.00

Jan 26, 2006

Features

•

Low on-resistance

R_DS(on)= 108 mΩ typ. (at V_GS= –4.5 V)

Low drive current.

1.8 V gate drive devices.

High density mounting

•

Outline

RENESAS Package code: PWSF0006JA-A

(Package name: CMFPAK-6)

2 3 4 5

D D D D

Indexband

1. Source

2. Drain

3. Drain

4. Drain

5. Drain

6. Gate

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to Source voltage

Gate to Source voltage

Drain current

Symbol

V_DSS

Ratings

Unit

–12

V_GSS

±8

I_D

–2

–8

Drain peak current

I_D(pulse)^Note1

Body - Drain diode reverse drain current

Channel dissipation

I_DR

–2

Pch^{Note 2}

Tch

830

°C

Channel temperature

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. When using the glass epoxy board. (FR4 40 × 40 × 1.6mm), Ta = 25°C

Rev.5.00 Jan 26, 2006 page 1 of 6

12 3 4 5 6 7

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