Datasheet > HAT1089C-EL-E

HAT1089C-EL-E

更新时间： 2024-11-11 07:02:47

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
7页	74K
描述
Silicon P Channel MOS FET Power Switching

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HAT1089C-EL-E 数据手册

HAT1089C

Silicon P Channel MOS FET

Power Switching

REJ03G1227-0300

Rev.3.00

Jun. 13, 2005

Features

•

Low on-resistance

R_DS(on)= 79 mΩ typ. (at V_GS= –4.5 V)

Low drive current.

2.5 V gate drive devices.

High density mounting

•

Outline

RENESAS Package code: PWSF0006JA-A

(Package name: CMFPAK-6)

2 3 4 5

D D D D

Indexband

1. Source

2. Drain

3. Drain

4. Drain

5. Drain

6. Gate

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to Source voltage

Gate to Source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

–20

±12

–2

Unit

Drain peak current

I_D(pulse)^Note1

–8

Body - Drain diode reverse drain current

Channel dissipation

I_DR

–2

Pch^{Note 2}

Tch

850

150

°C

Channel temperature

Storage temperature

Tstg

–55 to +150

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. When using the glass epoxy board. (FR4 40 × 40 × 1.6mm), Ta = 25°C

Rev.3.00, Jun. 13, 2005, page 1 of 6

12 3 4 5 6 7

中文翻译

下载PDF

与HAT1089C-EL-E相关器件

型号	品牌	获取价格	描述	数据表
HAT1090C	RENESAS	获取价格	Silicon P Channel MOS FET Power Switching
HAT1090C-EL-E	RENESAS	获取价格	Silicon P Channel MOS FET Power Switching
HAT1091C	RENESAS	获取价格	Silicon P Channel MOS FET Power Switching
HAT1091C-EL-E	RENESAS	获取价格	Silicon P Channel MOS FET Power Switching
HAT1093C	RENESAS	获取价格	Silicon P Channel MOSFET Power Switching
HAT1093C-EL-E	RENESAS	获取价格	Silicon P Channel MOSFET Power Switching
HAT1094C	RENESAS	获取价格	Silicon P Channel MOS FET Power Switching
HAT1095C	RENESAS	获取价格	Silicon P Channel MOS FET Power Switching
HAT1095C-EL-E	RENESAS	获取价格	Silicon P Channel MOS FET Power Switching
HAT1096C	RENESAS	获取价格	Silicon P Channel MOS FET Power Switching