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H5PS1G83EFR-E3 PDF预览

H5PS1G83EFR-E3

更新时间: 2024-09-15 19:50:51
品牌 Logo 应用领域
海力士 - HYNIX 时钟动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
44页 565K
描述
DDR DRAM, 128MX8, 0.6ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60

H5PS1G83EFR-E3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA, BGA60,9X11,32
针数:60Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.32
风险等级:5.83访问模式:MULTI BANK PAGE BURST
最长访问时间:0.6 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):200 MHzI/O 类型:COMMON
交错的突发长度:4,8JESD-30 代码:R-PBGA-B60
JESD-609代码:e1长度:11.4 mm
内存密度:1073741824 bit内存集成电路类型:DDR DRAM
内存宽度:8功能数量:1
端口数量:1端子数量:60
字数:134217728 words字数代码:128000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:组织:128MX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA60,9X11,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):260电源:1.8 V
认证状态:Not Qualified刷新周期:8192
座面最大高度:1.2 mm自我刷新:YES
连续突发长度:4,8子类别:DRAMs
最大压摆率:0.19 mA最大供电电压 (Vsup):1.9 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:20
宽度:8 mmBase Number Matches:1

H5PS1G83EFR-E3 数据手册

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H5PS1G43EFR  
H5PS1G83EFR  
H5PS1G63EFR  
1Gb DDR2 SDRAM  
H5PS1G43EFR  
H5PS1G83EFR  
H5PS1G63EFR  
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev. 0.4 / Nov 2008  
1

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