是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | TFBGA, |
针数: | 60 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.32 |
风险等级: | 5.83 | 访问模式: | MULTI BANK PAGE BURST |
最长访问时间: | 0.6 ns | 其他特性: | AUTO/SELF REFRESH |
JESD-30 代码: | R-PBGA-B60 | 长度: | 11.4 mm |
内存密度: | 1073741824 bit | 内存集成电路类型: | DDR DRAM |
内存宽度: | 8 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 60 |
字数: | 134217728 words | 字数代码: | 128000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | 组织: | 128MX8 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TFBGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
峰值回流温度(摄氏度): | NOT SPECIFIED | 座面最大高度: | 1.2 mm |
自我刷新: | YES | 最大供电电压 (Vsup): | 1.9 V |
最小供电电压 (Vsup): | 1.7 V | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 8 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
H5PS1G83EFR-E3Q | HYNIX |
获取价格 |
DDR DRAM, 128MX8, 0.6ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 | |
H5PS1G83EFR-G7I | HYNIX |
获取价格 |
DDR DRAM, 128MX8, 0.35ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 | |
H5PS1G83EFR-G7J | HYNIX |
获取价格 |
DDR DRAM, 128MX8, 0.35ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 | |
H5PS1G83EFR-G7L | HYNIX |
获取价格 |
DDR DRAM, 128MX8, 0.35ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 | |
H5PS1G83EFR-G7Q | HYNIX |
获取价格 |
1Gb DDR2 SDRAM | |
H5PS1G83EFR-S5I | HYNIX |
获取价格 |
DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 | |
H5PS1G83EFR-S5P | HYNIX |
获取价格 |
1Gb DDR2 SDRAM | |
H5PS1G83EFR-S6 | HYNIX |
获取价格 |
DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 | |
H5PS1G83EFR-S6C | HYNIX |
获取价格 |
DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 | |
H5PS1G83EFR-S6I | HYNIX |
获取价格 |
DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 |