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H5PS1G83EFR-E3P PDF预览

H5PS1G83EFR-E3P

更新时间: 2024-11-06 20:38:11
品牌 Logo 应用领域
海力士 - HYNIX 动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
63页 837K
描述
DDR DRAM, 128MX8, 0.6ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60

H5PS1G83EFR-E3P 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA,
针数:60Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.32
风险等级:5.83访问模式:MULTI BANK PAGE BURST
最长访问时间:0.6 ns其他特性:AUTO/SELF REFRESH
JESD-30 代码:R-PBGA-B60长度:11.4 mm
内存密度:1073741824 bit内存集成电路类型:DDR DRAM
内存宽度:8功能数量:1
端口数量:1端子数量:60
字数:134217728 words字数代码:128000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:组织:128MX8
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):NOT SPECIFIED座面最大高度:1.2 mm
自我刷新:YES最大供电电压 (Vsup):1.9 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8 mm
Base Number Matches:1

H5PS1G83EFR-E3P 数据手册

 浏览型号H5PS1G83EFR-E3P的Datasheet PDF文件第2页浏览型号H5PS1G83EFR-E3P的Datasheet PDF文件第3页浏览型号H5PS1G83EFR-E3P的Datasheet PDF文件第4页浏览型号H5PS1G83EFR-E3P的Datasheet PDF文件第5页浏览型号H5PS1G83EFR-E3P的Datasheet PDF文件第6页浏览型号H5PS1G83EFR-E3P的Datasheet PDF文件第7页 
H5PS1G83EFR Series  
1Gb DDR2 SDRAM  
H5PS1G83EFR-xxC  
H5PS1G83EFR-xxI  
H5PS1G83EFR-xxL  
H5PS1G83EFR-xxJ  
[TBD]  
H5PS1G83EFR-xxP  
H5PS1G83EFR-xxQ  
H5PS1G83EFR-G7x  
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev. 1.0 / Aug 2009  
1

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