是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | SC-63 |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.71 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 250 V | 最大漏极电流 (Abs) (ID): | 7 A |
最大漏极电流 (ID): | 7 A | 最大漏源导通电阻: | 0.67 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e6 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 250 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 30 W |
最大脉冲漏极电流 (IDM): | 28 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | TIN BISMUTH | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
H5N2504DSTR-E | RENESAS |
获取价格 |
暂无描述 | |
H5N2505D(L)-(2) | HITACHI |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
H5N2505D(S)-(2) | HITACHI |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
H5N2505D(S)-(3) | HITACHI |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,5A I(D),TO-252VAR | |
H5N2505DL | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N2505DL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N2505DS | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N2505DS-E | RENESAS |
获取价格 |
5A, 250V, 0.89ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | |
H5N2505DSTL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N2508D(S)-(1) | HITACHI |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |