是否Rohs认证: | 符合 | 生命周期: | Not Recommended |
零件包装代码: | DPAK(S) | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.38 |
Is Samacsys: | N | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (Abs) (ID): | 5 A | 最大漏极电流 (ID): | 5 A |
最大漏源导通电阻: | 0.89 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e6 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 245 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 25 W | 最大脉冲漏极电流 (IDM): | 20 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | TIN BISMUTH |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 20 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
H5N2505DS | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N2505DS-E | RENESAS |
获取价格 |
5A, 250V, 0.89ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | |
H5N2505DSTL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N2508D(S)-(1) | HITACHI |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
H5N2508D(S)-(2) | HITACHI |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
H5N2508DL | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N2508DL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N2508DS | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N2508DS-E | RENESAS |
获取价格 |
暂无描述 | |
H5N2508DSTL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |