生命周期: | Not Recommended | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.32 |
Is Samacsys: | N | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (ID): | 5 A | 最大漏源导通电阻: | 0.97 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 20 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
H5N2510DSTL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N2512CF | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N2512FL-M0 | RENESAS |
获取价格 |
250V - 18A - MOS FET High Speed Power Switching | |
H5N2512FL-M0-E#T2 | RENESAS |
获取价格 |
POWER, FET | |
H5N2512FL-M0-ET2 | RENESAS |
获取价格 |
250V - 18A - MOS FET High Speed Power Switching | |
H5N2512FN | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N2513PL | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N2513PL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N2514P | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N2514P-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |