Datasheet > H5N2508D(S)-(2)

H5N2508D(S)-(2)

更新时间： 2024-09-30 14:37:59

品牌	Logo	应用领域
日立 - HITACHI		/
页数	文件大小	规格书
12页	56K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

H5N2508D(S)-(2) 数据手册

H5N2508DL, H5N2508DS

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-1377 (Z)

1st. Edition

Mar. 2001

Features

•

Low on-resistance: R_DS(on)= 0.48 typ.

Low leakage current: IDSS = 1 µA max (at VDS = 250 V)

High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A)

Low gate charge: Qg = 13 nC typ (at VDD = 200 V, VGS = 10 V, ID = 7 A)

Avalanche ratings

Outline

DPAK-2

H5N2508DS

1. Gate

2. Drain

3. Source

4. Drain

H5N2508DL

12 3 4 5 6 7...12

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
H5N2508DL	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2508DL-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2508DS	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2508DS-E	RENESAS	获取价格	暂无描述
H5N2508DSTL-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2509P	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2509P	HITACHI	获取价格	SILICON N CHANNEL MOSFET SWITCHING
H5N2509P-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2510D(L)-(2)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
H5N2510D(S)-(3)	HITACHI	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,5A I(D),TO-252AA