是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.76 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 18 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 35 W | 子类别: | FET General Purpose Power |
表面贴装: | NO | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
H5N2512FL-M0-ET2 | RENESAS |
获取价格 |
250V - 18A - MOS FET High Speed Power Switching | |
H5N2512FN | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N2513PL | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N2513PL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N2514P | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N2514P-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N2515P | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N2515P-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N2517FN | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N2517FN-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |