H5N2513PL

更新时间： 2024-01-17 10:31:27

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
4页	74K
描述
Silicon N Channel MOS FET High Speed Power Switching

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H5N2513PL 数据手册

H5N2513PL

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1243-0100

Rev.1.00

Jul 25, 2008

Features

•

Low on-resistance

High speed switching

Built-in fast recovery diode

Outline

RENESAS Package code: PRSS0004ZF-A

(Package name: TO-3PL)

1. Gate

2. Drain (Flange)

3. Source

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

Ratings

250

Unit

V_DSS

V_GSS

I_D

±30

100

Note1

Drain peak current

I_{D (pulse)}

I_DR

400

Body-drain diode reverse drain current

100

Note1

Body-drain diode reverse drain

peak current

I_{DR (pulse)}

400

Note3

Avalanche current

I_AP

100

625

250

0.5

Note3

Avalanche energy

E_AR

Channel dissipation

Pch ^Note2

θch-c

Tch

Channel to case thermal impedance

Channel temperature

°C/W

°C

150

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. STch = 25°C, Tch ≤ 150°C

REJ03G1243-0100 Rev.1.00 Jul 25, 2008

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