Datasheet > H5N2505D(L)-(2)

H5N2505D(L)-(2)

更新时间： 2023-02-26 15:36:18

品牌	Logo	应用领域
日立 - HITACHI		/
页数	文件大小	规格书
7页	34K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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H5N2505D(L)-(2) 技术参数

H5N2505DL, H5N2505DS

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-1376 (Z)

Target Specification 1st. Edition

Mar. 2001

Features

•

Low on-resistance

Low drive current

High speed switching

Outline

DPAK-2

H5N2505DS

1. Gate

H5N2505DL

2. Drain

3. Source

4. Drain

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
H5N2505D(S)-(2)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
H5N2505D(S)-(3)	HITACHI	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,5A I(D),TO-252VAR
H5N2505DL	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2505DL-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2505DS	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2505DS-E	RENESAS	获取价格	5A, 250V, 0.89ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
H5N2505DSTL-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2508D(S)-(1)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
H5N2508D(S)-(2)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
H5N2508DL	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching