Datasheet > GVT7164C18Q-6T

GVT7164C18Q-6T

更新时间： 2024-11-01 21:17:27

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器内存集成电路
页数	文件大小	规格书
12页	160K
描述
Standard SRAM, 64KX18, 6ns, CMOS, PQFP100, PLASTIC, TQFP-100

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技术参数
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GVT7164C18Q-6T 技术参数

生命周期：	Obsolete	零件包装代码：	QFP
包装说明：	QFP,	针数：	100
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.84
最长访问时间：	6 ns	其他特性：	PIPELINED ARCHITECTURE
JESD-30 代码：	R-PQFP-G100	长度：	20 mm
内存密度：	1179648 bit	内存集成电路类型：	STANDARD SRAM
内存宽度：	18	功能数量：	1
端子数量：	100	字数：	65536 words
字数代码：	64000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	64KX18	封装主体材料：	PLASTIC/EPOXY
封装代码：	QFP	封装形状：	RECTANGULAR
封装形式：	FLATPACK	并行/串行：	PARALLEL
认证状态：	Not Qualified	座面最大高度：	3.4 mm
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	3.1 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	GULL WING	端子节距：	0.65 mm
端子位置：	QUAD	宽度：	14 mm
Base Number Matches：	1

GVT7164C18Q-6T 数据手册

298A

CY7C1298A/

GVT7164C18

64K x 18 Synchronous Burst RAM

Pipelined Output

The CY7C1298A/GVT7164C18 SRAM integrates 65536x18

SRAM cells with advanced synchronous peripheral circuitry

and a 2-bit counter for internal burst operation. All synchro-

nous inputs are gated by registers controlled by a posi-

tive-edge-triggered Clock input (CLK). The synchronous in-

puts include all addresses, all data inputs, address-pipelining

Chip Enable (CE), depth-expansion Chip Enables (CE2 and

CE2), burst control inputs (ADSC, ADSP, and ADV), Write En-

ables (WEL, WEH, and BWE), and Global Write (GW).

Features

• Fast access times: 5, 6, 7, and 8 ns

• Fast clock speed: 100, 83, 66, and 50 MHz

• Provide high-performance 3-1-1-1 access rate

• Fast OE access times: 5 and 6 ns

• Optimal for performance (two cycle chip deselect,

depth expansion without wait state)

• Single +3.3V –5 to +10% power supply

• 5V tolerant inputs except I/Os

• Clamp diodes to V_SSQat all inputs and outputs

• Common data inputs and data outputs

• Byte Write Enable and Global Write control

Asynchronous inputs include the Output Enable (OE) and

Burst Mode Control (MODE). The data outputs (Q), enabled

by OE, are also asynchronous.

Addresses and chip enables are registered with either Ad-

dress Status Processor (ADSP) or Address Status Controller

(ADSC) input pins. Subsequent burst addresses can be inter-

nally generated as controlled by the burst advance pin (ADV).

• Three chip enables for depth expansion and address

pipeline

• Address, control, input, and output pipeline registers

• Internally self-timed Write Cycle

• Write pass-through capability

• Burst control pins (interleaved or linear burst se-

quence)

• Automatic power-down for portable applications

• High-density, high-speed packages

Address, data inputs, and write controls are registered on-chip

to initiate self-timed Write cycle. Write cycles can be one to

four bytes wide as controlled by the write control inputs. Indi-

vidual byte write allows individual byte to be written. WEL con-

trols DQ1–DQ8 and DQP1. WEH controls DQ9–DQ16 and

DQP2. WEL and WEH can be active only with BWE being

LOW. GW being LOW causes all bytes to be written. This de-

vice also incorporates Write pass-through capability and pipe-

lined enable circuit for better system performance.

• Low capacitive bus loading

• High 30-pF output drive capability at rated access time

The CY7C1298A/GVT7164C18 operates from a +3.3V power

supply. All inputs and outputs are TTL-compatible. The device

is ideally suited for 486, Pentium®, 680x0, and PowerPC™

systems and for systems that are benefited from a wide syn-

chronous data bus.

Functional Description

The Cypress Synchronous Burst SRAM family employs

high-speed, low-power CMOS designs using advanced dou-

ble-layer polysilicon, double-layer metal technology. Each

memory cell consists of four transistors and two high valued

resistors.

Selection Guide

7C1298A-100

7164C18-5

7C1298A-83

7164C18-6

7C1298A-66

7164C18-7

7C1298A-50

7164C18-8

Maximum Access Time (ns)

360

315

270

225

Maximum Operating Current (mA)

Maximum CMOS Standby Current (mA)

Pentium is a registered trademark of Intel Corporation.

PowerPC is a trademark of International Business Machines, Inc.

Cypress Semiconductor Corporation

Document #: 38-05194 Rev. *A

•

3901 North First Street

•

San Jose

•

CA 95134

•

408-943-2600

Revised January 19, 2003

12 3 4 5 6 7...12

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与GVT7164C18Q-6T相关器件

型号	品牌	获取价格	描述	数据表
GVT7164C18Q-7	CYPRESS	获取价格	64K x 18 Synchronous Burst RAM Pipelined Output
GVT7164C18Q-8	CYPRESS	获取价格	64K x 18 Synchronous Burst RAM Pipelined Output
GVT7164D36T-3	CYPRESS	获取价格	Standard SRAM, 64KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
GVT7164D36T-4	CYPRESS	获取价格	Standard SRAM, 64KX36, 3.8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
GVT7164D36T-5	CYPRESS	获取价格	Standard SRAM, 64KX36, 4ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
GVT7164D36T-6	CYPRESS	获取价格	Standard SRAM, 64KX36, 4ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
GVT7164T18T-4	CYPRESS	获取价格	Cache Tag SRAM, 64KX18, 3.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-10
GVT7164T18T-5	CYPRESS	获取价格	Cache Tag SRAM, 64KX18, 3.8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-10
GVT7164T18T-7	CYPRESS	获取价格	Cache Tag SRAM, 64KX18, 4ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
GVT7165B36T-10	CYPRESS	获取价格	Application Specific SRAM, 64KX36, 10ns, CMOS, PQFP100

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