Datasheet > GVT7164B36T-8

GVT7164B36T-8

更新时间： 2024-11-01 19:27:31

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器内存集成电路
页数	文件大小	规格书
12页	142K
描述
Standard SRAM, 64KX36, 8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100

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技术参数
数据手册

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GVT7164B36T-8 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	QFP	包装说明：	14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
针数：	100	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	5.91	最长访问时间：	8 ns
I/O 类型：	COMMON	JESD-30 代码：	R-PQFP-G100
JESD-609代码：	e0	长度：	20 mm
内存密度：	2359296 bit	内存集成电路类型：	STANDARD SRAM
内存宽度：	36	湿度敏感等级：	3
功能数量：	1	端子数量：	100
字数：	65536 words	字数代码：	64000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	64KX36
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	LQFP	封装等效代码：	QFP100,.63X.87
封装形状：	RECTANGULAR	封装形式：	FLATPACK, LOW PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	2.5/3.3,3.3 V	认证状态：	Not Qualified
座面最大高度：	1.6 mm	最大待机电流：	0.002 A
最小待机电流：	3.14 V	子类别：	SRAMs
最大压摆率：	0.3 mA	最大供电电压 (Vsup)：	3.63 V
最小供电电压 (Vsup)：	3.135 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子面层：	TIN LEAD
端子形式：	GULL WING	端子节距：	0.65 mm
端子位置：	QUAD	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	14 mm	Base Number Matches：	1

GVT7164B36T-8 数据手册

PRELIMINARY

CY7C1344A/GVT7164B36

64K x 36 Synchronous Burst SRAM

The CY7C1344A/GVT7164B36 SRAM integrates 65,536x36

SRAM cells with advanced synchronous peripheral circuitry

and a 2-bit counter for internal burst operation. All synchro-

nous inputs are gated by registers controlled by a positive-

edge-triggered Clock input (CLK). The synchronous inputs in-

clude all addresses, all data inputs, address-pipelining Chip

Enable (CE), depth-expansion Chip Enables (CE2 and CE2),

Burst Control inputs (ADSC, ADSP, and ADV), Write Enables

Features

• Fast access times: 8, 8.5, 10, and 11 ns

• Fast clock speed: 100, 90, and 67 MHz

• Provide high performance 2-1-1-1 access rate

• Fast OE access times: 3.5, 4.0, 4.5, and 5.0 ns

• 3.3V –5% and +10% power supply

• Separate isolated output buffer supply compatible with

3.3V and 2.5V I/O (V ): 2.375V to 3.6V

• 5V tolerant inputs except I/Os

• Clamp diodes to V /V at all inputs and outputs

(BW1, BW2, BW3, BW4, and BWE), and Global Write (GW).

CCQ

Asynchronous inputs include the Output Enable (OE), Burst

Mode Control (MODE), and Sleep Mode Control (ZZ). The

data outputs (Q), enabled by OE, are also asynchronous.

SS SSQ

• Common data inputs and data outputs

• Byte Write Enable and Global Write control

• Three chip enables for depth expansion and address

pipeline

Addresses and chip enables are registered with either Ad-

dress Status Processor (ADSP) or Address Status Controller

(ADSC) input pins. Subsequent burst addresses can be inter-

nally generated as controlled by the Burst Advance pin (ADV).

• Address, data and control registers

• Internally self-timed Write Cycle

• Burst control pins (interleaved or linear burst se-

quence)

• Automatic power-down for portable applications

• High-density, high-speed packages

Address, data inputs, and write controls are registered on-chip

to initiate self-timed WRITE cycle. WRITE cycles can be one

to four bytes wide as controlled by the write control inputs.

Individual byte write allows individual byte to be written. BW1

controls DQ1–DQ8 and DQP1. BW2 controls DQ9–DQ16 and

DQP2. BW3 controls DQ17–DQ24 and DQP3. BW4 controls

DQ25–DQ32 and DQP4. BW1, BW2, BW3, and BW4 can be

active only with BWE being LOW. GW being LOW causes all

bytes to be written.

Functional Description

The Cypress Synchronous Burst SRAM family employs high-

speed, low power CMOS designs using advanced triple-layer

polysilicon, double-layer metal technology. Each memory cell

consists of four transistors and two high valued resistors.

The CY7C1344A/GVT7164B36 operates from a +3.3V power

supply. All inputs and outputs are TTL-compatible. The device

is ideally suited for 486, Pentium®, 680x0, and PowerPC™

systems and for systems that are benefited from a wide syn-

chronous data bus.

Selection Guide

7C1344A-100

7164B36-8

7C1344A-90

7164B36-9

7C1344A-66

7164B36-10

7C1344A1-6

7164B36-11

Maximum Access Time (ns)

8.0

300

8.5

280

10.0

260

11.0

260

Maximum Operating Current (mA)

Maximum CMOS Standby Current (mA)

Pentium is a registered trademark of Intel Corporation.

PowerPC is a trademark of IBM Corporation.

Cypress Semiconductor Corporation

•

3901 North First Street

•

San Jose

•

CA 95134

•

408-943-2600

June 14, 2000

12 3 4 5 6 7...12

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与GVT7164B36T-8相关器件

型号	品牌	获取价格	描述	数据表
GVT7164B36T-9	CYPRESS	获取价格	Standard SRAM, 64KX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
GVT7164C18	CYPRESS	获取价格	64K x 18 Synchronous Burst RAM Pipelined Output
GVT7164C18Q-5	CYPRESS	获取价格	64K x 18 Synchronous Burst RAM Pipelined Output
GVT7164C18Q-6	CYPRESS	获取价格	64K x 18 Synchronous Burst RAM Pipelined Output
GVT7164C18Q-6T	CYPRESS	获取价格	Standard SRAM, 64KX18, 6ns, CMOS, PQFP100, PLASTIC, TQFP-100
GVT7164C18Q-7	CYPRESS	获取价格	64K x 18 Synchronous Burst RAM Pipelined Output
GVT7164C18Q-8	CYPRESS	获取价格	64K x 18 Synchronous Burst RAM Pipelined Output
GVT7164D36T-3	CYPRESS	获取价格	Standard SRAM, 64KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
GVT7164D36T-4	CYPRESS	获取价格	Standard SRAM, 64KX36, 3.8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
GVT7164D36T-5	CYPRESS	获取价格	Standard SRAM, 64KX36, 4ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100

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