生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.84 | Is Samacsys: | N |
其他特性: | HIGH SPEED | 最大集电极电流 (IC): | 25 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE |
最大降落时间(tf): | 350 ns | 门极发射器阈值电压最大值: | 6 V |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 80 W |
最大功率耗散 (Abs): | 80 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | MOTOR CONTROL | 晶体管元件材料: | SILICON |
VCEsat-Max: | 4 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GT25PI120B9H | SILVERMICRO |
获取价格 |
PIM IGBT-1200V | |
GT25PI120C7H | SILVERMICRO |
获取价格 |
PIM IGBT-1200V | |
GT25PI120T5H | SILVERMICRO |
获取价格 |
PIM IGBT-1200V | |
GT25PI120T5H-T4 | SILVERMICRO |
获取价格 |
PIM IGBT-1200V | |
GT25Q101 | TOSHIBA |
获取价格 |
N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
GT25Q102 | TOSHIBA |
获取价格 |
N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS) | |
GT25Q102_06 | TOSHIBA |
获取价格 |
Silicon N Channel IGBT High Power Switching Applications | |
GT25Q301 | TOSHIBA |
获取价格 |
N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
GT25Q301_06 | TOSHIBA |
获取价格 |
Silicon N Channel IGBT High Power Switching Applications | |
GT25S | ETC |
获取价格 |
PNEUMATIC TURBINE VIBRATIORS |